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首頁 >NP48N055DLE>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
NP48N055DLE	文件：220.89 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=2	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社	NEC
NP48N055DLE	文件：307.45 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=24A) RDS(on)3=24mΩMAX.(VGS=4.5V,ID=24A) ?Lowinputcapacitance Ciss=1970	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP48N055DLE	文件：281.29 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP48N055DLE-S12-AY	文件：220.89 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=2	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社	NEC
NP48N055DLE-S12-AY	文件：307.45 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=24A) RDS(on)3=24mΩMAX.(VGS=4.5V,ID=24A) ?Lowinputcapacitance Ciss=1970	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP48N055DLE-S12-AYNote1,2	文件：308.03 Kbytes Page：12 Pages	SWITCHING N-CHANNEL POWER MOS FET	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP48N055EHE	文件：218.63 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFT	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社	NEC
NP48N055EHE	文件：305.15 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP48N055EHE	文件：345.06 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP48N055ELE	文件：345.22 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP48N055ELE	文件：307.45 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=24A) RDS(on)3=24mΩMAX.(VGS=4.5V,ID=24A) ?Lowinputcapacitance Ciss=1970	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP48N055ELE	文件：220.89 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=2	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社	NEC
NP48N055KHE	文件：218.63 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFT	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社	NEC
NP48N055KHE	文件：345.37 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP48N055KHE	文件：305.15 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP48N055KLE	文件：307.45 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=24A) RDS(on)3=24mΩMAX.(VGS=4.5V,ID=24A) ?Lowinputcapacitance Ciss=1970	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP48N055KLE	文件：345.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP48N055KLE	文件：5.67799 Mbytes Page：6 Pages	ProductScoutAutomotive	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP48N055KLE	文件：220.89 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=2	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社	NEC
NP48N055MHE	文件：218.63 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFT	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社	NEC

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詳細參數(shù)

型號：
NP48N055DLE
功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 48A I(D) | TO-262AA

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市一線半導(dǎo)體有限公司	NP48N055DLE	NEC	24+	TO-262	8866		詢價
深圳市博浩通科技有限公司	NP48N055DLE	NEC	23+	TO-262	12209	全新原裝	詢價
深圳市近平電子有限公司	NP48N055DLE	NEC	6000	面議	19	TO-262	詢價
深圳市維爾達電子有限公司	NP48N055KHE	NEC	2023+	TO-263	80000	一級代理/分銷渠道價格優(yōu)勢十年芯程一路只做原裝正品	詢價
深圳市國宇半導(dǎo)體科技有限公司	NP48N055KHE	R	23+	D2PAK	10000	公司只做原裝正品	詢價
京海半導(dǎo)體(深圳)有限公司	NP48N055KHE	VB	21+	D2PAK	10000	原裝現(xiàn)貨假一罰十	詢價
深圳市河鋒鑫科技有限公司	NP48N055KHE	RENESAS/瑞薩	2022+	TO-263	32500	原廠代理終端免費提供樣品	詢價
深圳市匯萊威科技有限公司	NP48N055KHE		VB	D2PAK	68900	原包原標(biāo)簽100%進口原裝常備現(xiàn)貨!	詢價
深圳市晨豪科技有限公司	NP48N055KHE	RENESAS/瑞薩	23+	TO-263	89630	當(dāng)天發(fā)貨全新原裝現(xiàn)貨	詢價
深圳市創(chuàng)新跡電子有限公司	NP48N055KHE	RENESAS/瑞薩	2022+	TO-263	30000	進口原裝現(xiàn)貨供應(yīng),原裝假一罰十	詢價

更多NP48N055DLE供應(yīng)商更新時間2025-1-16 10:02:00

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