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NP180N04TUJ

MOS FIELD EFFECT TRANSISTOR

Description TheNP180N04TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=1.5mΩMAX.(VGS=10V,ID=90A) ?LowCiss:Ciss=9500pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP180N04TUJ-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP180N04TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=1.5mΩMAX.(VGS=10V,ID=90A) ?LowCiss:Ciss=9500pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP180N04TUJ-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP180N04TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=1.5mΩMAX.(VGS=10V,ID=90A) ?LowCiss:Ciss=9500pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP180N04TUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.05mΩMAX.(VGS=10V,ID=90A) ?LowCiss:Ciss=10500pFTYP.(VDS=25V) ?Designedforautomotiveapplic

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP180N04TUK

MOS FIELD EFFECT TRANSISTOR

Description NP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.05m?MAX.(VGS=10V,ID=90A) ?LowCissCiss=10500pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP180N04TUK_V01

MOS FIELD EFFECT TRANSISTOR

Description NP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.05m?MAX.(VGS=10V,ID=90A) ?LowCissCiss=10500pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP180N04TUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description NP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.05m?MAX.(VGS=10V,ID=90A) ?LowCissCiss=10500pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP180N04TUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.05mΩMAX.(VGS=10V,ID=90A) ?LowCiss:Ciss=10500pFTYP.(VDS=25V) ?Designedforautomotiveapplic

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP180N04TUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description NP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.05m?MAX.(VGS=10V,ID=90A) ?LowCissCiss=10500pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP180N04TUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.05mΩMAX.(VGS=10V,ID=90A) ?LowCiss:Ciss=10500pFTYP.(VDS=25V) ?Designedforautomotiveapplic

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號：

    NP18

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
23+
TO-263-7
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NEC
21+
TO-263-7
10000
原裝現(xiàn)貨假一罰十
 詢價
NEC
2022
TO-263-7
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
RENESAS/瑞薩
2022+
TO-263
50000
原廠代理 終端免費(fèi)提供樣品
 詢價
NEC
23+
TO-263
6000
原裝正品，支持實(shí)單
 詢價
RENESAS/瑞薩
23+
TO-263
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價
NEC
23+
NA/
3850
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
RENESAS/瑞薩
2022+
TO-263
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價
RENESAS/瑞薩
22+
TO-263-7p
12500
瑞薩全系列在售,終端可出樣品
 詢價
RENESAS/瑞薩
22+
TO-263-7p
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
更多NP18供應(yīng)商 更新時間2025-3-9 11:00:00

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