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NIF9N05CL

Protected Power MOSFET 2.6 A, 52 V, N?Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT?223 Package

Benefits ?HighEnergyCapabilityforInductiveLoads ?LowSwitchingNoiseGeneration Features ?DiodeClampBetweenGateandSource ?ESDProtection?HBM5000V ?ActiveOver?VoltageGatetoDrainClamp ?ScalabletoLowerorHigherRDS(on) ?InternalSeriesGateResistance ?Pb?FreeP

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NIF9N05CL

PROTECTED POWER MOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NIF9N05CL

Protected Power MOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NIF9N05CL_V01

Protected Power MOSFET 2.6 A, 52 V, N?Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT?223 Package

Benefits ?HighEnergyCapabilityforInductiveLoads ?LowSwitchingNoiseGeneration Features ?DiodeClampBetweenGateandSource ?ESDProtection?HBM5000V ?ActiveOver?VoltageGatetoDrainClamp ?ScalabletoLowerorHigherRDS(on) ?InternalSeriesGateResistance ?Pb?FreeP

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NIF9N05CLT1

Protected Power MOSFET 2.6 A, 52 V, N?Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT?223 Package

Benefits ?HighEnergyCapabilityforInductiveLoads ?LowSwitchingNoiseGeneration Features ?DiodeClampBetweenGateandSource ?ESDProtection?HBM5000V ?ActiveOver?VoltageGatetoDrainClamp ?ScalabletoLowerorHigherRDS(on) ?InternalSeriesGateResistance ?Pb?FreeP

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NIF9N05CLT1G

Protected Power MOSFET 2.6 A, 52 V, N?Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT?223 Package

Benefits ?HighEnergyCapabilityforInductiveLoads ?LowSwitchingNoiseGeneration Features ?DiodeClampBetweenGateandSource ?ESDProtection?HBM5000V ?ActiveOver?VoltageGatetoDrainClamp ?ScalabletoLowerorHigherRDS(on) ?InternalSeriesGateResistance ?Pb?FreeP

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NIF9N05CLT3

Protected Power MOSFET 2.6 A, 52 V, N?Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT?223 Package

Benefits ?HighEnergyCapabilityforInductiveLoads ?LowSwitchingNoiseGeneration Features ?DiodeClampBetweenGateandSource ?ESDProtection?HBM5000V ?ActiveOver?VoltageGatetoDrainClamp ?ScalabletoLowerorHigherRDS(on) ?InternalSeriesGateResistance ?Pb?FreeP

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NIF9N05CLT3G

Protected Power MOSFET 2.6 A, 52 V, N?Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT?223 Package

Benefits ?HighEnergyCapabilityforInductiveLoads ?LowSwitchingNoiseGeneration Features ?DiodeClampBetweenGateandSource ?ESDProtection?HBM5000V ?ActiveOver?VoltageGatetoDrainClamp ?ScalabletoLowerorHigherRDS(on) ?InternalSeriesGateResistance ?Pb?FreeP

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NIF9N05CL_06

Protected Power MOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NIF9N05CLT1

PROTECTED POWER MOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NIF9N05CL

  • 制造商：

    ONSEMI

  • 制造商全稱：

    ON Semiconductor

  • 功能描述：

    Protected Power MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ON
23+
SOT-223
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
VBsemi(臺(tái)灣微碧)
2112+
SOT-223
105000
2500個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
 詢價(jià)
VBSEMI臺(tái)灣微碧
23+
SOT-223
22820
原裝正品，支持實(shí)單
 詢價(jià)
VBsemi
21+
SOT223
10026
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
VBsemi
2237+
SOT223
34069
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
VBsemi
24+
SOT223
9000
只做原裝正品 有掛有貨 假一賠十
 詢價(jià)
VBsemi
23+
原裝正品現(xiàn)貨
10000
SOT223
 詢價(jià)
24+
3000
公司存貨
 詢價(jià)
ON
23+
SOT-223(TO-2
10074
全新原裝
 詢價(jià)
ON
1415+
SOT-223
28500
全新原裝正品,優(yōu)勢(shì)熱賣
 詢價(jià)
更多NIF9N05CL供應(yīng)商 更新時(shí)間2025-1-21 13:59:00

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