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NEZ1011-2E

2W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION TheNEZ1011-2EandNEZ1414-2EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhighoutputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwithonlya50?externalcircuit.Toreducethermalresistancethedevic

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NEZ1011-2E

GaAs MES FET

2WX-BANDPOWERGaAsFET N-CHANNELGaAsMESFET DESCRIPTION TheNEZ1011-2EispowerGaAsFETwhichprovides highgain,highefficiencyandhighoutputpowerinXband. Theinternalinputandoutputmatchingenables guaranteedperformancetobeachievedwithonlya50W externalcircuit.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BLA1011-2

AvionicsLDMOStransistor

DESCRIPTION SiliconN-channelenhancementmodelateralD-MOStransistorencapsulatedina2-leadflangelesspackage(SOT538A)withaceramiccap.Thecommonsourceisconnectedtothemountingbase. FEATURES ?Highpowergain ?Easypowercontrol ?Excellentruggedness ?Sourceonmountingb

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLA1011-2

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

EIA1011-2P

10.7-11.7GHz,2WInternallyMatchedPowerFET

10.7-11.7GHz,2WInternallyMatchedPowerFET ?10.7-11.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM ?EIAFEATURESHIGHPAE(30TYPICAL) ?EIBFEATURESHIGHIP3(46dBmTYPICAL) ?+33.5/+33.0dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB ?9.5/8.5dBTYPICALG1dBPOWERGAINFOREIA/EI

Excelics

Excelics Semiconductor, Inc.

EIB1011-2P

10.7-11.7GHz,2WInternallyMatchedPowerFET

10.7-11.7GHz,2WInternallyMatchedPowerFET ?10.7-11.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM ?EIAFEATURESHIGHPAE(30TYPICAL) ?EIBFEATURESHIGHIP3(46dBmTYPICAL) ?+33.5/+33.0dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB ?9.5/8.5dBTYPICALG1dBPOWERGAINFOREIA/EI

Excelics

Excelics Semiconductor, Inc.

TIM1011-2L

MICROWAVEPOWERGaAsFET

FEATURES ■HIGHPOWER P1dB=33.5dBmat10.7GHzto11.7GHz ■HIGHGAIN G1dB=7.5dBat10.7GHzto11.7GHz ■BROADBANDINTERNALLYMATCHED ■HERMETICALLYSEALEDPACKAGE

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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NEC
23+
TO-59
8510
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NEC
24+
220
現(xiàn)貨供應(yīng)
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NEC
23+
原廠封裝
9980
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶(hù)至上/歡迎廣大客戶(hù)來(lái)電查詢(xún)
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NEC
22+23+
37478
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NEC
2023+
80000
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NEC
SMD
68900
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NEC
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27035
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NEC
23+
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50000
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NEC
2022
SMD
80000
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更多NEZ1011-2E供應(yīng)商 更新時(shí)間2024-11-9 9:10:00

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