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NESG2101M05-T1規(guī)格書詳情
NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW)
Flat-Lead 4-Pin Thin-Type Super Minimold (M05)
FEATURES
? The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification
? PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, ICq = 10 mA, f = 2 GHz
? NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz
? Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz
? High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
? Flat-lead 4-pin thin-type super minimold (M05) package
產(chǎn)品屬性
- 型號：
NESG2101M05-T1
- 功能描述：
射頻硅鍺晶體管 NPN SiGe High Freq
- RoHS：
否
- 制造商：
Infineon Technologies 發(fā)射極 - 基極電壓
- 封裝：
Reel
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
3000 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
NEC |
24+ |
SOT343 |
20000 |
全新原廠原裝，進口正品現(xiàn)貨，正規(guī)渠道可含稅?。?/div> |
詢價 | ||
NEC |
1145+ |
SOT343 |
2970 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
CEL |
23+ |
原廠原包 |
19960 |
只做進口原裝 終端工廠免費送樣 |
詢價 | ||
NEC |
08+ |
SOT-343 |
19500 |
詢價 | |||
RENASAG |
1822+ |
SOT-343 |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
NEC |
23+ |
SOT343 |
999999 |
原裝正品現(xiàn)貨量大可訂貨 |
詢價 | ||
RENESAS/瑞薩 |
23+ |
SOT343 |
30000 |
原裝現(xiàn)貨,假一賠十. |
詢價 | ||
NEC |
2016+ |
SOT-343 |
3000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
Renesas(瑞薩) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進口正品做服務(wù)做口碑有支持 |
詢價 |
