首頁 >NESG2031M16>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NESG2031M16 | NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP. | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | |
NESG2031M16 | NPN SILICON GERMANIUM RF TRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.@ | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
NESG2031M16 | HIGH FREQUENCY TRANSISTOR | CEL California Eastern Labs | CEL | |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP. | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.@ | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP. | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.@ | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP. | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.@ | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH FREQUENCY TRANSISTOR | CEL California Eastern Labs | CEL |
詳細(xì)參數(shù)
- 型號：
NESG2031M16
- 功能描述：
射頻硅鍺晶體管 RO 551-NESG2031M16-A
- RoHS：
否
- 制造商：
Infineon Technologies 發(fā)射極 - 基極電壓
- 封裝：
Reel
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
6-PINMINIMOLD |
4897 |
絕對原裝!現(xiàn)貨熱賣! |
詢價 | ||
NEC |
24+ |
6-PINM |
16200 |
新進(jìn)庫存/原裝 |
詢價 | ||
NEC |
6000 |
面議 |
19 |
DIP/SMD |
詢價 | ||
NEC |
24+ |
6-PINM |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | ||
CEL |
23+ |
原廠原包 |
19960 |
只做進(jìn)口原裝 終端工廠免費送樣 |
詢價 | ||
CEL |
24+ |
原廠原裝 |
5000 |
原裝正品 |
詢價 | ||
6-PINM |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價 | ||
RENESAS/瑞薩 |
24+ |
SOT-563 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單! |
詢價 | ||
NEC |
23+ |
SOT563 |
27000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
NEC |
04+ |
SOT563 |
10000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 |
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