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NESG2021M16

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG2021M16

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,Ga

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2021M16

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

CEL

California Eastern Labs

NESG2021M16

NECs NPN SiGe HIGH FREQUENCY TRANSISTOR

CALMIRCO

California Micro Devices Corp

NESG2021M16-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG2021M16-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,Ga

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2021M16-T3

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG2021M16-T3

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,Ga

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2021M16-T3-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG2021M16-T3-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,Ga

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號：

    NESG2021M16

  • 功能描述：

    射頻硅鍺晶體管 RO 551-NESG2021M16-A

  • RoHS：

    否

  • 制造商：

    Infineon Technologies 發(fā)射極 - 基極電壓

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
CALMIRCO
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費送樣
 詢價
NEC
24+
6-PINM
9600
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單!
 詢價
NEC
23+
6-PINM
50000
原裝正品 支持實單
 詢價
CEL
24+
原廠原封
4000
原裝正品
 詢價
RENESAS
12+
6-PINM
5427
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
RENESAS
2023+
6-PINM
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
 詢價
RENESAS
24+
6-PINM
9000
只做原裝正品 有掛有貨 假一賠十
 詢價
24+
N/A
64000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
RENESAS
23+
6-PINM
5427
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
RENESAS
24+
6-PINM
5427
進(jìn)口原裝
 詢價
更多NESG2021M16供應(yīng)商 更新時間2025-4-12 8:00:00

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