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NES1823P-100中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

NES1823P-100
廠商型號(hào)

NES1823P-100

功能描述

100W L-BAND PUSH-PULL POWER GaAs MESFET

文件大小

154.62 Kbytes

頁面數(shù)量

20

生產(chǎn)廠商 Renesas Electronics America
企業(yè)簡稱

NEC瑞薩

中文名稱

日本瑞薩電子株式會(huì)社官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-28 23:00:00

NES1823P-100規(guī)格書詳情

DESCRIPTION

The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz with different maching.

The device employs Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide and nitride passivation for superior performance, thermal characteristics, and reliability.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

? Push-pull type N-channel GaAs MESFET

? High Output Power : 100 W TYP.

? High Linear Gain : 11.0 dB TYP.

? High Drain Efficiency: 50 TYP. @VDS = 10 V, IDset = 6 A, f = 2.2 GHz

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