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NE68000中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

NE68000
廠商型號(hào)

NE68000

功能描述

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

文件大小

246.53 Kbytes

頁(yè)面數(shù)量

19 頁(yè)

生產(chǎn)廠商 Renesas Electronics America
企業(yè)簡(jiǎn)稱

NEC瑞薩

中文名稱

日本瑞薩電子株式會(huì)社官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-11-16 17:45:00

NE68000規(guī)格書(shū)詳情

DESCRIPTION

NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680s high fT makes it ideal for low voltage/low current applications, down to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is 35 mA. For higher current applications see the NE681 series.

FEATURES

? HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz

? LOW NOISE FIGURE:

1.7 dB at 2 GHz

2.6 dB at 4 GHz

? HIGH ASSOCIATED GAIN:

12.5 dB at 2 GHz

8.0 dB at 4 GHz

? EXCELLENT LOW VOLTAGE

LOW CURRENT PERFORMANCE

產(chǎn)品屬性

  • 型號(hào):

    NE68000

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

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