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NE55

PRECISION TIMERS

Description Thesedevicesareprecisiontimingcircuitscapableofproducingaccuratetimedelaysoroscillation.Inthetimedelayormonostablemodeofoperation,thetimedintervaliscontrolledbyasingleexternalresistorandcapacitornetwork.Intheastablemodeofoperation,thefrequenc

DIODES

Diodes Incorporated

NE55

Internally Compensated Dual Low Noise Operational Amplifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NE5500134

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFOR0.8TO2.0GHzCELLULARHANDSETS DESCRIPTION TheNE5500134isanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for0.8to2.0GHzcellularhandsets.DiesaremanufacturedusingourNEWMOStechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500134-AZ

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFOR0.8TO2.0GHzCELLULARHANDSETS DESCRIPTION TheNE5500134isanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for0.8to2.0GHzcellularhandsets.DiesaremanufacturedusingourNEWMOStechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500134-T1

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFOR0.8TO2.0GHzCELLULARHANDSETS DESCRIPTION TheNE5500134isanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for0.8to2.0GHzcellularhandsets.DiesaremanufacturedusingourNEWMOStechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500134-T1-AZ

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFOR0.8TO2.0GHzCELLULARHANDSETS DESCRIPTION TheNE5500134isanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for0.8to2.0GHzcellularhandsets.DiesaremanufacturedusingourNEWMOStechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500179A

SILICON POWER MOS FET

4.8VOPERATIONSILICONRFPOWERLDMOSFET FOR1.9GHz1WTRANSMISSIONAMPLIFIERS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500179A-T1

SILICON POWER MOS FET

4.8VOPERATIONSILICONRFPOWERLDMOSFET FOR1.9GHz1WTRANSMISSIONAMPLIFIERS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500234

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFORDCS1800/PCS1900HANDSETS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500234-AZ

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFORDCS1800/PCS1900HANDSETS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500234-T1

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFORDCS1800/PCS1900HANDSETS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500234-T1-AZ

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFORDCS1800/PCS1900HANDSETS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500434

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFORGSMCLASS4HANDSETS DESCRIPTION TheNE5500434isanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier forGSMclass4handsets.DiesaremanufacturedusingourNEWMOStechnology(our0.6μmWSigatelat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500434-AZ

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFORGSMCLASS4HANDSETS DESCRIPTION TheNE5500434isanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier forGSMclass4handsets.DiesaremanufacturedusingourNEWMOStechnology(our0.6μmWSigatelat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500434-T1

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFORGSMCLASS4HANDSETS DESCRIPTION TheNE5500434isanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier forGSMclass4handsets.DiesaremanufacturedusingourNEWMOStechnology(our0.6μmWSigatelat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500434-T1-AZ

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFORGSMCLASS4HANDSETS DESCRIPTION TheNE5500434isanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier forGSMclass4handsets.DiesaremanufacturedusingourNEWMOStechnology(our0.6μmWSigatelat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500479A

SILICON POWER MOS FET

3.5VOPERATIONSILICONRFPOWERLDMOSFET FOR900MHz1WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5500479AisanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier forcellularhandsets.DiesaremanufacturedusingourNEWMOStechnology(our0.6μmWSi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500479A-T1

SILICON POWER MOS FET

3.5VOPERATIONSILICONRFPOWERLDMOSFET FOR900MHz1WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5500479AisanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier forcellularhandsets.DiesaremanufacturedusingourNEWMOStechnology(our0.6μmWSi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5510279A

SILICON POWER MOS FET

4.8VOPERATIONSILICONRFPOWERLDMOSFET FOR1.8GHz2WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5510279AisanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for4.8VGSM1800handsets.DiesaremanufacturedusingourNEWMOStechnology(our0.6

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5510279A-T1

SILICON POWER MOS FET

4.8VOPERATIONSILICONRFPOWERLDMOSFET FOR1.8GHz2WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5510279AisanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for4.8VGSM1800handsets.DiesaremanufacturedusingourNEWMOStechnology(our0.6

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    NE55

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    SILICON POWER MOS FET

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TI
20+
DIP
11520
特價(jià)全新原裝公司現(xiàn)貨
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TI
23+
SOP8
12000
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TI德州儀器
20+
DIP8
19800
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RENESAS(瑞薩)/IDT
23+
7350
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S
23+
SOP-16
90000
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TI
2117
8-SOIC
125895
原廠原裝
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TI
24+
8-TSSOP
10000
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XBLW(芯伯樂(lè))
23+
DIP-14
840
時(shí)鐘芯片/百分百原裝現(xiàn)貨
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TI
22+
8-TSSOP
5000
全新原裝,力挺實(shí)單
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24+
DIP
133
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更多NE55供應(yīng)商 更新時(shí)間2024-10-24 17:55:00