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NE55

PRECISION TIMERS

Description Thesedevicesareprecisiontimingcircuitscapableofproducingaccuratetimedelaysoroscillation.Inthetimedelayormonostablemodeofoperation,thetimedintervaliscontrolledbyasingleexternalresistorandcapacitornetwork.Intheastablemodeofoperation,thefrequenc

DIODES

Diodes Incorporated

NE55

Internally Compensated Dual Low Noise Operational Amplifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NE5500134

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFOR0.8TO2.0GHzCELLULARHANDSETS DESCRIPTION TheNE5500134isanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for0.8to2.0GHzcellularhandsets.DiesaremanufacturedusingourNEWMOStechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500134-AZ

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFOR0.8TO2.0GHzCELLULARHANDSETS DESCRIPTION TheNE5500134isanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for0.8to2.0GHzcellularhandsets.DiesaremanufacturedusingourNEWMOStechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500134-T1

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFOR0.8TO2.0GHzCELLULARHANDSETS DESCRIPTION TheNE5500134isanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for0.8to2.0GHzcellularhandsets.DiesaremanufacturedusingourNEWMOStechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500134-T1-AZ

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFOR0.8TO2.0GHzCELLULARHANDSETS DESCRIPTION TheNE5500134isanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for0.8to2.0GHzcellularhandsets.DiesaremanufacturedusingourNEWMOStechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500179A

SILICON POWER MOS FET

4.8VOPERATIONSILICONRFPOWERLDMOSFET FOR1.9GHz1WTRANSMISSIONAMPLIFIERS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500179A-T1

SILICON POWER MOS FET

4.8VOPERATIONSILICONRFPOWERLDMOSFET FOR1.9GHz1WTRANSMISSIONAMPLIFIERS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500234

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFORDCS1800/PCS1900HANDSETS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500234-AZ

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFORDCS1800/PCS1900HANDSETS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500234-T1

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFORDCS1800/PCS1900HANDSETS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500234-T1-AZ

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFORDCS1800/PCS1900HANDSETS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500434

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFORGSMCLASS4HANDSETS DESCRIPTION TheNE5500434isanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier forGSMclass4handsets.DiesaremanufacturedusingourNEWMOStechnology(our0.6μmWSigatelat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500434-AZ

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFORGSMCLASS4HANDSETS DESCRIPTION TheNE5500434isanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier forGSMclass4handsets.DiesaremanufacturedusingourNEWMOStechnology(our0.6μmWSigatelat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500434-T1

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFORGSMCLASS4HANDSETS DESCRIPTION TheNE5500434isanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier forGSMclass4handsets.DiesaremanufacturedusingourNEWMOStechnology(our0.6μmWSigatelat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500434-T1-AZ

SILICON POWER MOS FET

N-CHANNELSILICONPOWERMOSFET POWERAMPLIFIERFORGSMCLASS4HANDSETS DESCRIPTION TheNE5500434isanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier forGSMclass4handsets.DiesaremanufacturedusingourNEWMOStechnology(our0.6μmWSigatelat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500479A

SILICON POWER MOS FET

3.5VOPERATIONSILICONRFPOWERLDMOSFET FOR900MHz1WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5500479AisanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier forcellularhandsets.DiesaremanufacturedusingourNEWMOStechnology(our0.6μmWSi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5500479A-T1

SILICON POWER MOS FET

3.5VOPERATIONSILICONRFPOWERLDMOSFET FOR900MHz1WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5500479AisanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier forcellularhandsets.DiesaremanufacturedusingourNEWMOStechnology(our0.6μmWSi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5510279A

SILICON POWER MOS FET

4.8VOPERATIONSILICONRFPOWERLDMOSFET FOR1.8GHz2WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5510279AisanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for4.8VGSM1800handsets.DiesaremanufacturedusingourNEWMOStechnology(our0.6

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5510279A-T1

SILICON POWER MOS FET

4.8VOPERATIONSILICONRFPOWERLDMOSFET FOR1.8GHz2WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5510279AisanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for4.8VGSM1800handsets.DiesaremanufacturedusingourNEWMOStechnology(our0.6

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

替換型號(hào)

詳細(xì)參數(shù)

  • 型號(hào)：

    NE55

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    SILICON POWER MOS FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
24+
DIP
133
新
 詢價(jià)
ST/意法半導(dǎo)體
2022+
14-SOIC
1000
只做原裝，可提供樣品
 詢價(jià)
PHILIPS/飛利浦
1535+
3509
詢價(jià)
TI德州儀器
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
 詢價(jià)
TI/德州儀器
21+
SOIC-14
9990
只有原裝
 詢價(jià)
ON(安森美)
23+
標(biāo)準(zhǔn)封裝
5000
原廠原裝現(xiàn)貨訂貨價(jià)格優(yōu)勢終端BOM表可配單提供樣品
 詢價(jià)
ON
24+
SOIC-8
25000
ON全系列可訂貨
 詢價(jià)
PHI
2023+
DIP
9600
進(jìn)口原裝現(xiàn)貨
 詢價(jià)
MINI
24+
SMD其他電子元
17
一級(jí)代理全新原裝現(xiàn)貨
 詢價(jià)
ST
1215+
DIP-14
150000
全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng).
 詢價(jià)
更多NE55供應(yīng)商 更新時(shí)間2025-1-5 16:00:00

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