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NE33284A-T1中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書

NE33284A-T1
廠商型號(hào)

NE33284A-T1

功能描述

L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

文件大小

62.89 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 Renesas Electronics America
企業(yè)簡(jiǎn)稱

NEC瑞薩

中文名稱

日本瑞薩電子株式會(huì)社官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-12 10:33:00

NE33284A-T1規(guī)格書詳情

DESCRIPTION

The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications.

FEATURES

? VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz

? HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz

? GATE LENGTH: 0.3 μm

? GATE WIDTH: 280 μm

? LOW COST METAL/CERAMIC PACKAGE

? TAPE & REEL PACKAGING OPTION AVAILABLE

產(chǎn)品屬性

  • 型號(hào):

    NE33284A-T1

  • 功能描述:

    MOSFET DISC BY CEL 01/02 84AS LO-NOISE HJ FET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
NEC
21+
SMT86
12588
原裝正品,自己庫(kù)存 假一罰十
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NEC
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68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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NEC
22+
SMT86
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
詢價(jià)
NEC
22+
SMT
3000
原裝正品,支持實(shí)單
詢價(jià)
NEC
20+
SMT36
49000
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
詢價(jià)
NEC瑞薩
24+
SMT84
598000
原裝現(xiàn)貨假一賠十
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NEC
24+
SO86
200
詢價(jià)
NEC
23+
SMT
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
NEC
SMT36
245
詢價(jià)
NEC
22+
SMT36
25000
只有原裝原裝,支持BOM配單
詢價(jià)