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NDS9958中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

NDS9958
廠商型號(hào)

NDS9958

功能描述

Dual N & P-Channel Enhancement Mode Field Effect Transistor

文件大小

360.86 Kbytes

頁(yè)面數(shù)量

12 頁(yè)

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-11-2 8:00:00

NDS9958規(guī)格書詳情

General Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management, Half bridge motor control, cellular phone, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

■ N-Channel 3.5A, 20V, RDS(ON) = 0.1Ω @ VGS = 10V.

P-Channel -3.5A , -20V, RDS(ON) = 0.1Ω @ VGS = -10V.

■ High density cell design for extremely low RDS(ON).

■ High power and current handling capability in a widely used surface mount package.

■ Dual (N & P-Channel) MOSFET in surface mount package.

產(chǎn)品屬性

  • 型號(hào):

    NDS9958

  • 功能描述:

    MOSFET DISC BY MFG 2/02

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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