NDP710AE中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
NDP710AE規(guī)格書詳情
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
■ 42 and 40A, 100V. RDS(ON) = 0.038 and 0.042W.
■ Critical DC electrical parameters specified at elevated temperature.
■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
■ 175°C maximum junction temperature rating.
■ High density cell design (3 million/in2) for extremely low RDS(ON).
■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
產(chǎn)品屬性
- 型號(hào)：
NDP710AE
- 制造商：
FAIRCHILD
- 制造商全稱：
Fairchild Semiconductor
- 功能描述：
N-Channel Enhancement Mode Field Effect Transistor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
圜達(dá) |
23+ |
插件 |
6000 |
誠(chéng)信服務(wù)，絕對(duì)原裝原盤 |
詢價(jià) | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
NSC |
24+ |
TO-23 |
22 |
詢價(jià) | |||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
Diptronics(圓達(dá)) |
22+ |
NA |
500000 |
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂 |
詢價(jià) | ||
F |
22+ |
TO-220AB |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
ON Semiconductor |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
ON Semiconductor |
23+ |
TO2203 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
F |
23+ |
TO-220AB |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
ONSemiconductor |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng) |
詢價(jià) |
