NDP410BE中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
NDP410BE規(guī)格書詳情
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
■ 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω.
■ Critical DC electrical parameters specified at elevated temperature.
■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
■ 175°C maximum junction temperature rating.
■ High density cell design (3 million/in2) for extremely low RDS(ON).
■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
產(chǎn)品屬性
- 型號(hào)：
NDP410BE
- 制造商：
FAIRCHILD
- 制造商全稱：
Fairchild Semiconductor
- 功能描述：
N-Channel Enhancement Mode Field Effect Transistor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NS/國半 |
23+ |
NA/ |
3316 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票 |
詢價(jià) | ||
onsemi(安森美) |
23+ |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | |||
NS/國半 |
589220 |
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量 |
詢價(jià) | ||||
NS/國半 |
22+ |
TO-220 |
9000 |
原裝正品 |
詢價(jià) | ||
NS |
24+ |
TO-220 |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
24+ |
3000 |
公司存貨 |
詢價(jià) | ||||
F |
22+ |
TO220AB |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
F |
23+ |
TO220AB |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
NS/國半 |
98+ |
TO-220 |
200 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
F |
TO220AB |
22+ |
6000 |
十年配單,只做原裝 |
詢價(jià) |
