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10N50

10Amps,500VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC10N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanc

UTCUnisonic Technologies

友順友順科技股份有限公司

10N50

10A,500VN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

10N50A

10A500VN-channelenhancedfieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風微電子廣東佑風微電子有限公司

10N50B

10A500VN-channelenhancedfieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風微電子廣東佑風微電子有限公司

10N50C

500VN-ChannelMOSFETImproveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

10N50K-MT

N-CHANNELJFETFORELECTRETCONDENSERMICROPHONE

UTCUnisonic Technologies

友順友順科技股份有限公司

AOTF10N50FD

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=10A@TC=25℃ ?DrainSourceVoltage- :VDSS=500V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max) ?100avalanchetested ?MinimumLot-to-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

AOTF10N50FD

N-Channel650V(D-S)PowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

AOTF10N50FD

500V,10AN-ChannelMOSFETwithFastRecoveryDiode

GeneralDescription TheAOTF10N50FDhasbeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchecapabilitythispartc

AOSMDAlpha & Omega Semiconductors

萬國半導體美國萬國半導體

FDP10N50F

N-ChannelMOSFET500V,9A,0.85廓

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF10N50FT

N-ChannelMOSFET500V,9A,0.85廓

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF10N50FT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDPF10N50UT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=8A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDPF10N50UT

N-ChannelUniFETTMUltraFRFETTMMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FLX10N50

HighVoltagePowerSupplies

TDKTDK Corporation

TDK株式會社東電化（中國）投資有限公司

FQB10N50CF

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.61Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQB10N50CFTM

N-ChannelQFETRFRFETRMOSFET500V,10A,610m

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP10N50CF

500VN-ChannelMOSFETImproveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP10N50CF

500VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF10N50CF

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.61Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

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