首頁 >NDF03N60ZG>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
NDF03N60ZG | N-Channel Power MOSFET 600 V, 3.3 | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | |
NDF03N60ZG | N-Channel Power MOSFET | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | |
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
PowerMOSFET | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFETFeatures | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
??C-DFast??RC-DrivesIGBToptimizedforhighswitchingfrequency | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
RC-DriveandRC-DriveFast | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptimizedEon,EoffandQrrforlowswitchinglosses | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LightMOSPowerTransistor LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細參數(shù)
- 型號：
NDF03N60ZG
- 功能描述：
MOSFET 3.6 OHM 600V TO-220FP
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TO-220-3 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
VB |
2019 |
TO-220FP |
55000 |
絕對原裝正品假一罰十! |
詢價 | ||
O |
2020+ |
TO-220F |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
ON/安森美 |
23+ |
TO-220-3 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
ON/安森美 |
2021+ |
TO-220 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
ON |
22+ |
TO-220F |
28600 |
只做原裝正品現(xiàn)貨假一賠十一級代理 |
詢價 | ||
ON/安森美 |
23+ |
TO220FP |
10000 |
公司只做原裝正品 |
詢價 | ||
ON |
23+ |
TO-220屬封 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
VB |
21+ |
TO-220FP |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ON Semiconductor |
22+ |
TO2203 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 |
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