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045N10A

100VN-ChannelMOSFET

?Fastswitchingspeed ?Lowgatecharge,QG=54nC(typical) ?Highperformancechanneltechnologycanachieveverylow RDS(on). ?Highpowerandhighcurrenthandlingcapacity ?MeetRoHSstandards ?VDS=100V ?ID(atVGS=10V)=100A ?RDS(ON)(atVGS=10V)

UMWUMW Rightway Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司(簡(jiǎn)稱UMW?)

045N10N

OptiMOSTM3Power-Transistor

VDS100V RDS(on),max4.5mW ID64A Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Ideal

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

045N10N

OptiMOSTM3Power-Transistor,100V

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchronousrectification ?Halogen-freeaccor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

FDI045N10A

N-ChannelPowerTrench?MOSFET100V,164A,4.5m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP045N10A

100VN-ChannelMOSFET

?Fastswitchingspeed ?Lowgatecharge,QG=54nC(typical) ?Highperformancechanneltechnologycanachieveverylow RDS(on). ?Highpowerandhighcurrenthandlingcapacity ?MeetRoHSstandards ?VDS=100V ?ID(atVGS=10V)=100A ?RDS(ON)(atVGS=10V)

UMWUMW Rightway Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司(簡(jiǎn)稱UMW?)

FDP045N10A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=164A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP045N10A

N-ChannelPowerTrench?MOSFET100V,164A,4.5m

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDPF045N10A

N-ChannelPowerTrench?MOSFET100V,67A,4.5m

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDPF045N10A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

HY045N10B

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

華羿微電華羿微電子股份有限公司

HY045N10MF

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

華羿微電華羿微電子股份有限公司

HY045N10P

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

華羿微電華羿微電子股份有限公司

KU045N10P

N-chTrenchMOSFET

GeneralDescription ThisTrenchMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConverter,SynchronousRectificationandaloadswitchinbatterypoweredapplications FEATU

KECKEC CORPORATION

KEC株式會(huì)社

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NCE POWER
23+
NA
18
MOSFET
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NCE
23+
-
5000
華南總代
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NCE/新潔能
24+
TO-220F
100000
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22+
DFN5X6-8L
100000
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NCE
23+
DFN5x6
6000
全新原裝,歡迎來電咨詢
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NCE新潔能
22+
DFN5X6-8L
95000
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
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NCE
21+
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38421
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NCE
21+
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20000
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23+
TO-220
50000
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2022
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80000
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更多NCEP045N10F供應(yīng)商 更新時(shí)間2024-11-18 9:30:00