NCD57200DR2G集成電路（IC）的柵極驅(qū)動(dòng)器規(guī)格書PDF中文資料

NCD57200DR2G屬于集成電路（IC）的柵極驅(qū)動(dòng)器。由安森美半導(dǎo)體公司制造生產(chǎn)的NCD57200DR2G柵極驅(qū)動(dòng)器柵極驅(qū)動(dòng)器電源管理集成電路 (PMIC) 可用于提供隔離、放大、參考位移、自舉或其他必要功能，這些功能可將來自電源轉(zhuǎn)換應(yīng)用中控制設(shè)備的信號(hào)連接到電源被控制通過的半導(dǎo)體設(shè)備（通常為 FET 或 IGBT）。任何特定設(shè)備提供的確切功能各不相同，但與它適合驅(qū)動(dòng)的半導(dǎo)體配置相關(guān)。

The NCD57200 is a high voltage gate driver with one non- isolated

low side gate driver and one galvanically isolated high or low side gate

driver. It can directly drive two IGBTs in a half bridge configuration.

Isolated high side driver can be powered with an isolated power supply

or with Bootstrap technique from the low side power supply.

The galvanic isolation for the high side gate driver guarantees

reliable switching in high power applications for IGBTs that operate

up to 800 V, at high dv/dt. The optimized output stages provide a mean

of reducing IGBT losses. Its features include two independent inputs

with deadtime and interlock, accurate asymmetric UVLOs, and short

and matched propagation delays. The NCD57200 operates with its

VDD/VBS up to 20 V.

Features

? High Peak Output Current (+1.9 A/- 2.3 A)

? Low Output Voltage Drop for Enhanced IGBT Conduction

? Floating Channel for Bootstrap Operation up to +800 V

? CMTI up to 100 kV/ms

? Reliable Operation for VS Negative Swing to - 800 V

? VDD & VBS Supply Range up to 20 V

? 3.3 V, 5 V, and 15 V Logic Input

? Asymmetric Under Voltage Lockout Thresholds for High Side and

Low Side

? Matched Propagation Delay 90 ns

? Built- in 20 ns Minimum Pulse Width Filter (or Input Noise Filter)

? Built- in 340 ns Dead- Time and High and Low Inputs Interlock

? Non- Inverting Output Signal

? This Device is Pb- Free, Halogen Free/BFR Free and is RoHS

Compliant

Typical Applications

? Fans, Pumps

? Home Appliances

? Consumer Electronics

? General Purpose Half Bridge Applications