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NAND512R3A2C中文資料NUMONYX數(shù)據(jù)手冊(cè)PDF規(guī)格書
廠商型號(hào) |
NAND512R3A2C |
參數(shù)屬性 | NAND512R3A2C 封裝/外殼為63-TFBGA;包裝為管件;類別為集成電路(IC) > 存儲(chǔ)器;產(chǎn)品描述:IC FLSH 512MBIT PARALLEL 63VFBGA |
功能描述 | 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
文件大小 |
1.27065 Mbytes |
頁(yè)面數(shù)量 |
51 頁(yè) |
生產(chǎn)廠商 | numonyx |
企業(yè)簡(jiǎn)稱 |
NUMONYX |
中文名稱 | numonyx官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2024-11-5 22:30:00 |
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Description
The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that
uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page
family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C
have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of
a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on
whether the device has a x8 or x16 bus width.
The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or
x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate
to other densities without changing the footprint.
To extend the lifetime of NAND Flash devices it is strongly recommended to implement an
Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000
program/erase cycles for each block. A Write Protect pin is available to give a hardware
protection against program and erase operations.
Features
● High density NAND Flash memories
– 512 Mbit memory array
– Cost effective solutions for mass storage applications
● NAND interface
– x 8 or x 16 bus width
– Multiplexed Address/ Data
● Supply voltage: 1.8 V, 3.0 V
● Page size
– x 8 device: (512 + 16 spare) bytes
– x 16 device: (256 + 8 spare) words
● Block size
– x 8 device: (16 K + 512 spare) bytes
– x 16 device: (8 K + 256 spare) words
● Page Read/Program
– Random access: 12 μs (3 V)/15 μs (1.8 V) (max)
– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)
– Page Program time: 200 μs (typ)
● Copy Back Program mode
● Fast Block Erase: 2 ms (typ)
● Status Register
● Electronic signature
● Chip Enable ‘don’t care’
● Serial Number option
● Hardware Data Protection
– Program/Erase locked during Power transitions
● Data integrity
– 100,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
● ECOPACK? packages
● Development tools
– Error Correction Code models
– Bad Blocks Management and Wear Leveling algorithms
– Hardware simulation models
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
NAND512R3A2CZA6E
- 制造商:
Micron Technology Inc.
- 類別:
集成電路(IC) > 存儲(chǔ)器
- 包裝:
管件
- 存儲(chǔ)器類型:
非易失
- 存儲(chǔ)器格式:
閃存
- 技術(shù):
閃存 - NAND
- 存儲(chǔ)容量:
512Mb(64M x 8)
- 存儲(chǔ)器接口:
并聯(lián)
- 寫周期時(shí)間 - 字,頁(yè):
50ns
- 電壓 - 供電:
1.7V ~ 1.95V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
63-TFBGA
- 供應(yīng)商器件封裝:
63-VFBGA(9x11)
- 描述:
IC FLSH 512MBIT PARALLEL 63VFBGA
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ST |
2020+ |
BGA |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
MRON/美光 |
23+ |
NA/ |
59 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
ST/意法 |
21+ |
BGA |
1062 |
只做原裝正品,不止網(wǎng)上數(shù)量,歡迎電話微信查詢! |
詢價(jià) | ||
ST |
23+ |
BGA |
20000 |
原廠原裝正品現(xiàn)貨 |
詢價(jià) | ||
ST |
2018+ |
BGA |
6528 |
承若只做進(jìn)口原裝正品假一賠十! |
詢價(jià) | ||
16+ |
BGA |
2500 |
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)! |
詢價(jià) | |||
STM |
23+ |
BGA |
30000 |
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
ST |
2023+ |
BGA |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
MICRON/美光 |
2022 |
BGA |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
NUMONYX |
21+ |
BGA |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) |
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