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N0600N

MOS FIELD EFFECT TRANSISTOR

Description TheN0600NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)1=25m?MAX.(VGS=10V,ID=15A) ?RDS(on)2=36mΩMAX.(VGS=4.5V,ID=15A) ?Lowinputcapacitance ?Ciss

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0600N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

N0601N

N-CHANNEL MOSFET FOR SWITCHING

Description TheN0601NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=4.2mΩMAX.(VGS=10V,ID=50A) ?Lowinputcapacitance Ciss=7730pFTYP.(VDS=25V,VGS=0V) ?Hig

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0601N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

N0601N-ZK-E1-AY

N-CHANNEL MOSFET FOR SWITCHING

Description TheN0601NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=4.2mΩMAX.(VGS=10V,ID=50A) ?Lowinputcapacitance Ciss=7730pFTYP.(VDS=25V,VGS=0V) ?Hig

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0601N-ZK-E2-AY

N-CHANNEL MOSFET FOR SWITCHING

Description TheN0601NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=4.2mΩMAX.(VGS=10V,ID=50A) ?Lowinputcapacitance Ciss=7730pFTYP.(VDS=25V,VGS=0V) ?Hig

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0602N

N-CHANNEL MOSFET FOR SWITCHING

Description TheN0602NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=4.6mΩMAX.(VGS=10V,ID=50A) ?Lowinputcapacitance Ciss=7730pFTYP.(VDS=25V,VGS=0V) ?Hig

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0602N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

N0603N

N-CHANNEL MOSFET FOR SWITCHING

Description TheN0603NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=4.6mΩMAX.(VGS=10V,ID=50A) ?Lowinputcapacitance Ciss=7730pFTYP.(VDS=25V,VGS=0V) ?Highcurrent ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0603N

N-CHANNEL MOSFET FOR SWITCHING

Description TheN0603NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=4.6mΩMAX.(VGS=10V,ID=50A) ?Lowinputcapacitance Ciss=7730pFTYP.(VDS=25V,VGS=0V) ?Highcurrent ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    N06

  • 制造商：

    Renesas Electronics Corporation

  • 功能描述：

    Trans MOSFET N-CH 60V 30A Tube

  • 功能描述：

    SINGLE MOSFET, NCH, 60V, TO-220 - Tape and Reel

  • 功能描述：

    MOSFET N-CH 60V 30A TO-220

供應商型號品牌批號封裝庫存備注價格
NEXPERIA/安世
23+
SOT666
69820
終端可以免費供樣,支持BOM配單!
 詢價
R
22+
TO-220
6000
十年配單,只做原裝
 詢價
R
23+
TO-220
6000
原裝正品，支持實單
 詢價
NEC/RENESAS瑞薩
23+
TO-220
89630
當天發(fā)貨全新原裝現(xiàn)貨
 詢價
R
22+
TO-220
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
R
25+
TO-TO-220
37650
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
RENESAS/瑞薩
23+
TO-TO-220
19057
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
L3 Narda-MITEQ
24+
專注軍工級宇航級器件長期排單訂
600
詢價
RENESAS/瑞薩
1703+PB
TO252
445
就找我吧!--邀您體驗愉快問購元件!
 詢價
RENESAS
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多N06供應商 更新時間2025-4-12 11:00:00

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