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MX1011B430W中文資料飛利浦?jǐn)?shù)據(jù)手冊(cè)PDF規(guī)格書

MX1011B430W
廠商型號(hào)

MX1011B430W

功能描述

NPN microwave power transistor

文件大小

47.5 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 NXP Semiconductors
企業(yè)簡(jiǎn)稱

Philips飛利浦

中文名稱

荷蘭皇家飛利浦官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-3 19:00:00

MX1011B430W規(guī)格書詳情

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange.

FEATURES

? Suitable for short and medium

pulse applications up to

500 μs/10

? Internal input and output

prematching networks allow an

easier design of circuits

? Diffused emitter ballasting resistors

improve ruggedness

? Interdigitated emitter-base

structure provides high emitter

efficiency

? Gold metallization with barrier

realizes very stable characteristics

and excellent lifetime

? Multicell geometry improves power

sharing and reduces thermal

resistance.

APPLICATIONS

Intended for use in common base,

class C, broadband, pulsed power

amplifiers for TCAS applications in

the 1030 to 1090 MHz band. Also

suitable for medium pulse, heavy duty

operation within this band.

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