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MWS5114D2中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

MWS5114D2
廠商型號(hào)

MWS5114D2

功能描述

1024-Word x 4-Bit LSI Static RAM

文件大小

29.33 Kbytes

頁(yè)面數(shù)量

7 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-29 17:07:00

MWS5114D2規(guī)格書(shū)詳情

Description

The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output and utilizes a single power supply of 4.5V to 6.5V.

The MWS5114 is supplied in 18 lead, hermetic, dual-in-line sidebrazed ceramic packages (D suffix) and in 18 lead dual in-line plastic packages (E suffix).

Features

? Fully Static Operation

? Industry Standard 1024 x 4 Pinout (Same as Pinouts for 6514, 2114, 9114, and 4045 Types)

? Common Data Input and Output

? Memory Retention for Standby Battery Voltage as Low as 2V Min

? All Inputs and Outputs Directly TTL Compatible

? Three-State Outputs

? Low Standby and Operating Power

產(chǎn)品屬性

  • 型號(hào):

    MWS5114D2

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

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