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MTW20N50E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書

MTW20N50E
廠商型號(hào)

MTW20N50E

功能描述

TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM

文件大小

193.73 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-3-6 22:59:00

人工找貨

MTW20N50E價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨

MTW20N50E規(guī)格書詳情

TMOS E?FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole

N?Channel Enhancement?Mode Silicon Gate

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

? Robust High Voltage Termination

? Avalanche Energy Specified

? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

? IDSS and VDS(on) Specified at Elevated Temperature

? Isolated Mounting Hole Reduces Mounting Hardware

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
ON/安森美
23+
NA/
17138
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
詢價(jià)
ON/安森美
24+
TO247
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
詢價(jià)
ON/安森美
23+
TO-247
6000
原裝正品,支持實(shí)單
詢價(jià)
MOT
06+
TO-247
2500
原裝庫存
詢價(jià)
ON
2020+
TO-3P
35000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
詢價(jià)
MTW23N25E
56
56
詢價(jià)
24+
3900
詢價(jià)
ON/安森美
2022
TO247
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
MOT
23+
TO-3P
5000
原裝正品,假一罰十
詢價(jià)
ON
23+
TO-247
6893
詢價(jià)