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MTV16N50E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTV16N50E

TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM

TMOSE?FETPowerFieldEffectTransistorD3PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETis

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTV16N50E

Power Field Effect Transistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PSM16N50CT

16A500VSingleN??hannelPowerMOSFET

PFC

PFC Device Inc.

SIHB16N50C

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHB16N50C

PowerMOSFET

FEATURES ?Lowfigure-of-meritRonxQg ?100avalanchetested ?Gatechargeimproved ?trr/Qrrimproved ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoHS-compliantand/orpa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF16N50C

PowerMOSFET

FEATURES ?Lowfigure-of-meritRonxQg ?100avalanchetested ?Gatechargeimproved ?trr/Qrrimproved ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoHS-compliantand/orpa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF16N50C

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

SIHF16N50C

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHFB16N50K

LowGateChargeQgResultsinSimpleDriveRequirement

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFB16N50K

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG16N50C

PowerMOSFET

FEATURES ?LowFigure-of-MeritRonxQg ?100AvalancheTested ?GateChargeImproved ?Trr/QrrImproved ?ComplianttoRoHSDirective2002/95/EC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG16N50C

PowerMOSFET

FEATURES ?LowFigure-of-MeritRonxQg ?100AvalancheTested ?GateChargeImproved ?Trr/QrrImproved ?ComplianttoRoHSDirective2002/95/EC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP16N50C

GateChargeImprovedComplianttoRoHSDirective2002/95/EC

FEATURES ?LowFigure-of-MeritRonxQg ?100AvalancheTested ?GateChargeImproved ?Trr/QrrImproved ?ComplianttoRoHSDirective2002/95/EC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP16N50C

PowerMOSFET

FEATURES ?Lowfigure-of-meritRonxQg ?100avalanchetested ?Gatechargeimproved ?trr/Qrrimproved ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoHS-compliantand/orpa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP16N50C

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SLB16N50C

500VN-ChannelMOSFET

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美普森深圳市美普森半導(dǎo)體有限公司

SLF16N50C

500VN-ChannelMOSFET

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美普森深圳市美普森半導(dǎo)體有限公司

SLI16N50C

500VN-ChannelMOSFET

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美普森深圳市美普森半導(dǎo)體有限公司

SLP16N50C

500VN-ChannelMOSFET

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美普森深圳市美普森半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號:

    MTV16N50E

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

  • 制造商:

    ON Semiconductor

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onsemi(安森美)
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MOTOROLA/摩托羅拉
18+
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ITT
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更多MTV16N50E供應(yīng)商 更新時(shí)間2025-1-11 15:14:00