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MZ112

3WATTGLASSZENERDIODES

FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance.

MicrosemiMicrosemi Corporation

美高森美美高森美公司

N112

PolyurethaneAdhesive-BackBumpers

HeycoHeyco.

海科

N112A

1/4ENCLOSEDPHONEJACKS

SWITCH

Switch Publishing Co.，Ltd.

N112APC

1/4ENCLOSEDPHONEJACKS

SWITCH

Switch Publishing Co.，Ltd.

N112B

1/4ENCLOSEDPHONEJACKS

SWITCH

Switch Publishing Co.，Ltd.

N112BPC

1/4ENCLOSEDPHONEJACKS

SWITCH

Switch Publishing Co.，Ltd.

NCP112

SupervisoryICforDesktopPowerSupplyMonitoring

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP112D

SupervisoryICforDesktopPowerSupplyMonitoring

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP112DG

SupervisoryICforDesktopPowerSupplyMonitoring

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP112P

SupervisoryICforDesktopPowerSupplyMonitoring

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP112PG

SupervisoryICforDesktopPowerSupplyMonitoring

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

ND112

BandswitchingDiode

Features ?Extremelysmallsizepackage:0.8×0.6×0.4㎜Typ. ?VHFtunerbandswitchapplications. ?VeryLowseriesresistance:rS=Typ0.5Ω@IF=2mA ?Lowtotalcapacitance:CT=1.2pF(Max.)

AUK

AUK corp

ND112

BandswitchingDiode

Features ?Extremelysmallsizepackage:0.8×0.6×0.4㎜Typ. ?VHFtunerbandswitchapplications. ?VeryLowseriesresistance:rS=Typ0.5Ω@IF=2mA ?Lowtotalcapacitance:CT=1.2pF(Max.)

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

NJVMJD112

ComplementaryDarlingtonPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NJVMJD112G

ComplementaryDarlingtonPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NJVMJD112G

ComplementaryDarlingtonPowerTransistorsDPAKForSurfaceMountApplications

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(“?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NL112A

1/4ENCLOSEDPHONEJACKS

SWITCH

Switch Publishing Co.，Ltd.

NL112B

1/4ENCLOSEDPHONEJACKS

SWITCH

Switch Publishing Co.，Ltd.

NMR112C

Isolated1WSingleOutputDC/DCConverters

MuRataMurata Manufacturing Co., Ltd.

村田村田制作所

NTE112

SiliconSmallSignalSchottkyDiode

Description: TheNTE112isametaltosiliconjunctiondiodeinaDO35typepackageprimarlyintendedforUHFmixersandultrafastswitchingapplications.

NTE

NTE Electronics

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
MYSON
PLCC
98900
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MYSON
23+
PLCC
98900
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MYSON
24+
PLCC
96880
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ITT
20+
連接器
93
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N/A
58000
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24+
5000
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SYSON
23+
PLCC
15758
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MT
16+
PLCC
140
原裝現(xiàn)貨假一罰十
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MYSON
PLCC
00+
63
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
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MYSON
2016+
PLCC44
6523
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更多MTV112-OTP供應(yīng)商 更新時(shí)間2024-12-23 16:10:00

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