HDTMOS E-FET? Power Field Effect Transistor

N-Channel Enhancement-Mode Silicon Gate

This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy–efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.

? Ultra Low RDS(on), High–Cell Density, HDTMOS

? SPICE Parameters Available

? Diode is Characterized for Use in Bridge Circuits

? Diode Exhibits High Speed, Yet Soft Recovery

? IDSS and VDS(on) Specified at Elevated Temperature

? Avalanche Energy Specified