零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
MTP52N06V | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=52A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=22mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
MTP52N06V | TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | |
MTP52N06V | N??hannel Power MOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
MTP52N06V | N-Channel 60 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | |
TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N??hannel Power MOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
N??hannel Power MOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=52A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channelTrenchMOSstandardlevelFET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
N-channelTrenchMOSstandardlevelFET Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Lowconduc | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
N-channelenhancementmodefield-effecttransistor Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: PHP52N06TinSOT78(TO-220AB). Features ■Lowon-stateresistance ■175°Crated. Applications ■DCtoDCconverters ■Uninterruptiblepowersup | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips |
詳細(xì)參數(shù)
- 型號:
MTP52N06V
- 制造商:
MOTOROLA
- 制造商全稱:
Motorola, Inc
- 功能描述:
TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
MOT |
06+ |
TO-220 |
3000 |
原裝庫存 |
詢價 | ||
ON |
637 |
TO-220 |
100 |
全新原裝現(xiàn)貨 |
詢價 | ||
ON |
23+ |
TO-220 |
6893 |
詢價 | |||
MOT |
24+ |
TO-220 |
5810 |
詢價 | |||
ON |
2020+ |
TO-220 |
35000 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫存 |
詢價 | ||
ON |
1822+ |
TO220 |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
ON |
21+ |
TO-220 |
12588 |
原裝正品 |
詢價 | ||
ON |
18+ |
TO-220 |
41200 |
原裝正品,現(xiàn)貨特價 |
詢價 | ||
ON |
20+ |
TO-220 |
38900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
ON |
2020+ |
TO-220 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 |
相關(guān)規(guī)格書
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相關(guān)庫存
更多- MTP5H-E10-C
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