MTP4N40E中文資料Motorola數(shù)據(jù)手冊PDF規(guī)格書
MTP4N40E規(guī)格書詳情
T MOS E-FET? Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號(hào)：
MTP4N40E
- 制造商：
ON Semiconductor
- 功能描述：
Trans MOSFET N-CH 400V 4A 3-Pin(3+Tab) TO-220
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價(jià) | ||||
onsemi(安森美) |
23+ |
- |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價(jià) | ||
ON |
24+ |
N/A |
2150 |
詢價(jià) | |||
ON |
23+ |
TO220 |
10026 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
ST |
17+ |
TO-220 |
6200 |
詢價(jià) | |||
O |
22+ |
TO220AB |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
O |
23+ |
TO220AB |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
ON |
21+ |
TO220 |
10026 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
ON |
2023+ |
TO220 |
8800 |
正品渠道現(xiàn)貨 終端可提供BOM表配單。 |
詢價(jià) | ||
ON/安森美 |
2022+ |
TO-220 |
12888 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) |
