MTP3N120E中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
MTP3N120E規(guī)格書詳情
TMOS E-FET Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced high–voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls, and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Capability Specified at Elevated Temperature
? Low Stored Gate Charge for Efficient Switching
? Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor Absorbs High Energy in the Avalanche Mode
? Source–to–Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
* See App. Note AN1327 — Very Wide Input Voltage Range;
Off–line Flyback Switching Power Supply
產(chǎn)品屬性
- 型號：
MTP3N120E
- 制造商：
MOTOROLA
- 制造商全稱：
Motorola, Inc
- 功能描述：
TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
2020+ |
TO-220 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
ON/安森美 |
22+ |
TO220 |
50000 |
只做原裝假一罰十,歡迎咨詢 |
詢價 | ||
ON(安森美) |
23+ |
13325 |
公司只做原裝正品,假一賠十 |
詢價 | |||
ON/安森美 |
24+ |
NA/ |
45 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
ON |
24+ |
TO-220 |
56000 |
公司進口原裝現(xiàn)貨 批量特價支持 |
詢價 | ||
ON(安森美) |
24+ |
標準封裝 |
9571 |
全新原裝正品/價格優(yōu)惠/質(zhì)量保障 |
詢價 | ||
ON(安森美) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持 |
詢價 | ||
ON/安森美 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ON |
23+ |
TO-220 |
6893 |
詢價 | |||
ON(安森美) |
23+ |
標準封裝 |
5000 |
原廠原裝現(xiàn)貨訂貨價格優(yōu)勢終端BOM表可配單提供樣品 |
詢價 |
