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MTP2N20

N-Channel Power MOSFETs 3.5 A, 150-200 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

MTP2N20

N-Channel Power MOSFETs 3.5 A, 150-200 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

MTP2N20

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=3.25A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP2N20

POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE

Motorola

Motorola, Inc

MTP2N20

N-Channel Power Mosfets

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

2N20

DrainCurrentID=2A@TC=25C

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

EMDA2N20A

N‐ChannelLogicLevelEnhancementModeFieldEffectTransistor

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMDA2N20F

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS200V RDSON(MAX.)120mΩ ID18A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

HM2N20

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

HM2N20MR

200VN-ChannelEnhancementModeMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

HM2N20R

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

MPT2N20

N-ChannelPowerMOSFETs,3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MTD2N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=2A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTD2N20

POWERFIELDEFFECTTRANSISTORN-CHANNELENHANCEMENT-MODESILICONGATE

Motorola

Motorola, Inc

MTEE2N20FP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

RFP2N20

2A,200V,3.500Ohm,N-ChannelPowerMOSFET

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

Intersil

Intersil Corporation

RFP2N20L

2A,200V,3.500Ohm,LogicLevel,N-ChannelPowerMOSFET

TheRFP2N20LN-Channelenhancementmodesilicongatepowerfieldeffecttransistorisspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplishedthroughaspecial

Intersil

Intersil Corporation

RFP2N20L

N-ChannelLogicLevelPowerField-EffectTransistors(L2FET)

TheRFL1N18LandRFL1N20LandtheRFP2N18LandRFP2N20Laren-channelenhancement-modesilicon-gatepower,field-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesInapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

RFP2N20L

N-ChannelLogicLevelPowerField-EffectTransistors(L2FET)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

RT2N20M

COMPOSITETRANSISTORWITHRESISTORFORSWITCHINGAPPLICATIONSILICONNPNEPITAXIALTYPE

DESCRIPTION RT2N20Misacompositetransistorwithbuilt-inbiasresistor FEATURE ●Built-inbiasresistor(R1=4.7KΩ) ●Minipackageforeasymounting APPLICATION Invertedcircuit,switchingcircuit,interfacecircuit,drivercircuit

ISAHAYAIsahaya Electronics Corporation

諫早電子諫早電子株式會社

詳細參數(shù)

  • 型號：

    MTP2N20

  • 制造商：

    MOTOROLA

  • 制造商全稱：

    Motorola, Inc

  • 功能描述：

    POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE

供應商型號品牌批號封裝庫存備注價格
IR
17+
TO-220
31518
原裝正品 可含稅交易
 詢價
IR
24+
TO 220
161052
明嘉萊只做原裝正品現(xiàn)貨
 詢價
ON
23+
TO-220
6893
詢價
ON
24+
N/A
1570
詢價
ON
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價
MOT
05+
TO-220
3000
原裝進口
 詢價
ON
2020+
TO-220
35000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
O
23+
TO-220
10000
公司只做原裝正品
 詢價
ON/安森美
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ON/安森美
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
更多MTP2N20供應商 更新時間2024-11-6 16:37:00

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