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MTP20N06

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOSVPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Ju

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP20N06

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=85mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP20N06V

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOSVPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Ju

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP20N06V

N??hannel Power MOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDT20N06

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

NTD20N06

PowerMOSFET20Amps,60Volts,N??hannelDPAK

MOSFET–Power,N-Channel,DPAK20A,60V Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features ?LowerRDS(on) ?LowerVDS(on) ?LowerCapacitances ?LowerTotalGateCharge ?LowerandTighterVSD

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD20N06

PowerMOSFET20Amps,60Volts,N??hannelDPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD20N06

PowerMOSFET

PowerMOSFET20Amps,60Volts,N?ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features ?Pb?FreePackagesareAvailable ?LowerRDS(on) ?LowerVDS(on) ?LowerCapacitances ?LowerTotal

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD20N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=46mΩ(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NTD20N06G

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    MTP20N06

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

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1700
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MOT
06+
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3000
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23+
SOD27
69820
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2022+
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12888
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2800
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25000
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96740
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35628
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更多MTP20N06供應(yīng)商 更新時(shí)間2025-3-21 14:00:00