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MTP10N10E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書

MTP10N10E
廠商型號(hào)

MTP10N10E

功能描述

TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

文件大小

237.95 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-27 14:16:00

MTP10N10E規(guī)格書詳情

TMOS IV Power Field Effect Transistor

N-Channel Enhancement-Mode Silicon Gate

This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer drain–to–source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients.

? Internal Source–to–Drain Diode Designed to Replace External

Zener Transient Suppressor — Absorbs High Energy in the

Avalanche Mode — Unclamped Inductive Switching (UIS)

Energy Capability Specified at 100°C

? Commutating Safe Operating Area (CSOA) Specified for Use in Half and Full Bridge Circuits

? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

產(chǎn)品屬性

  • 型號(hào):

    MTP10N10E

  • 制造商:

    MOTOROLA

  • 制造商全稱:

    Motorola, Inc

  • 功能描述:

    TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
ON
2020+
TO220
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
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24+
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16800
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ON
2023+
TO-220AB
3577
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ON
20+
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ON/安森美
23+
NA/
35750
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MOT
23+
TO-220
12800
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MOT
128+
TO-220
50
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ON
2016+
TO-220
6528
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ON
23+
TO-220-3
11846
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O
22+
TO220AB
6000
十年配單,只做原裝
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