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MTD4N20I

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

EMDA4N20A

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS200V RDSON(MAX.)140mΩ ID15A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

FQB4N20

200VN-ChannelMOSFET

Features ?3.6A,200V,RDS(on)=1.4?@VGS=10V ?Lowgatecharge(typical5.0nC) ?LowCrss(typical5.0pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB4N20L

200VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?3.8A,200V,RDS(on)=1.35?@VGS=10V ?Lowgatecharge(typical4.0nC) ?LowCrss(typical6.0pF) ?Fastswit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD4N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQD4N20

200VN-ChannelMOSFET

Features ?3.0A,200V,RDS(on)=1.4?(Max.)@VGS=10V ?Lowgatecharge(Typ.5.0nC) ?LowCrss(Typ.5.0pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD4N20

N-ChannelQFETMOSFET200V,3.0A,1.4

Features ?3.0A,200V,RDS(on)=1.4?(Max.)@VGS=10V ?Lowgatecharge(Typ.5.0nC) ?LowCrss(Typ.5.0pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD4N20L

200VLOGICN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD4N20L

200VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD4N20LTF

200VLOGICN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD4N20TF

N-ChannelQFETMOSFET200V,3.0A,1.4

Features ?3.0A,200V,RDS(on)=1.4?(Max.)@VGS=10V ?Lowgatecharge(Typ.5.0nC) ?LowCrss(Typ.5.0pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQI4N20

200VN-ChannelMOSFET

Features ?3.6A,200V,RDS(on)=1.4?@VGS=10V ?Lowgatecharge(typical5.0nC) ?LowCrss(typical5.0pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQI4N20L

200VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?3.8A,200V,RDS(on)=1.35?@VGS=10V ?Lowgatecharge(typical4.0nC) ?LowCrss(typical6.0pF) ?Fastswit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP4N20

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

FQP4N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQP4N20

200VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP4N20

200VN-ChannelMOSFET

Features ?3.6A,200V,RDS(on)=1.4?@VGS=10V ?Lowgatecharge(typical5.0nC) ?LowCrss(typical5.0pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP4N20L

200VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF4N20

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?2.8A,200V,RDS(on)=1.4?@VGS=10V ?Lowgatecharge(typical5.0nC) ?LowCrss(typical5.0pF) ?Fastswitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF4N20L

200VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

供應(yīng)商型號品牌批號封裝庫存備注價格
ON/安森美
22+
SOT252
20000
保證原裝正品,假一陪十
 詢價
ON/安森美
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ON/安森美
2022
TO-251
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
ON/安森美
21+
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
24+
5000
公司存貨
 詢價
MOTOROLA
22+
TO-252
3000
原裝正品,支持實單
 詢價
ON
23+
TO-252
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
 詢價
ON/安森美
23+
TO-252
15238
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
ON
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
ON
2023+
SOT252
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
更多MTD4N20I供應(yīng)商 更新時間2024-11-6 15:03:00

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