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MTD1N80E

TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM

ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignal

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP1N80E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP1N80E

TMOSPOWERFET1.0AMPERES800VOLTSRDS(on)=12OHMS

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PJP1N80

800VN-ChannelEnhancementModeMOSFET

FEATURES ?1A,800V,RDS(ON)=16?@VGS=10V,ID=0.5A ?LowONResistance ?FastSwitching ?LowGateCharge ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS ?IncompliancewithEURoHs2002/95/ECDirectives

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PJU1N80

800VN-ChannelEnhancementModeMOSFET

FEATURES ?1A,800V,RDS(ON)=16?@VGS=10V,ID=0.5A ?LowONResistance ?FastSwitching ?LowGateCharge ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS ?IncompliancewithEURoHs2002/95/ECDirectives

PANJITPan Jit International Inc.

強茂強茂股份有限公司

SSF1N80D

MainProductCharacteristics

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

SW1N80A

N-channelMOSFET

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

SWC1N80A

N-channelMOSFET

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

TSM1N80

800VN-ChannelMOSFET

GeneralDescription TheTSM1N80isusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientdesig

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

TSM1N80

N-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

詳細參數(shù)

  • 型號:

    MTD1N80E

  • 制造商:

    MOTOROLA

  • 制造商全稱:

    Motorola, Inc

  • 功能描述:

    TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM

供應商型號品牌批號封裝庫存備注價格
ON/安森美
24+
5000
只做原廠渠道 可追溯貨源
詢價
ON/安森美
24+
TO-252
505348
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價
ON
23+
TO-252
6893
詢價
ON
24+
N/A
5000
公司存貨
詢價
ON
12+
TO-252(DPAK)
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
詢價
ON
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
ON/安森美
專業(yè)鐵帽
TO-252
4
原裝鐵帽專營,代理渠道量大可訂貨
詢價
ON/安森美
20+
TO-252
67500
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
ON
2020+
SOT-252
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
ON
24+
35200
一級代理/放心采購
詢價
更多MTD1N80E供應商 更新時間2025-4-14 11:07:00