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MTB36N06V

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.04Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTB36N06V

TMOS POWER FET 32 AMPERES 60 VOLTS

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB36N06V

N??hannel Power MOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB36N06VT4

N??hannel Power MOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP36N06

TMOSPOWERFET32AMPERES60VOLTSRDS(on)=0.04OHM

TMOSPOWERFET32AMPERES60VOLTSRDS(on)=0.04OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour 50

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP36N06E

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MTP36N06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=40mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP36N06V

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP36N06V

TMOSPOWERFET32AMPERES60VOLTSRDS(on)=0.04OHM

TMOSPOWERFET32AMPERES60VOLTSRDS(on)=0.04OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour 50

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PHB36N06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=41A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=38mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號：

    MTB36N06V

  • 制造商：

    ON Semiconductor

  • 功能描述：

    Trans MOSFET N-CH 60V 32A 3-Pin(2+Tab) D2PAK T/R

供應(yīng)商型號品牌批號封裝庫存備注價格
ON/安森美
24+
3350
只做原廠渠道 可追溯貨源
 詢價
ON
24+
30000
詢價
ON
12+
TO-263
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
ON
23+
TO-263
6893
詢價
ON
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
MOT
23+
NA
1832
專做原裝正品,假一罰百!
 詢價
ON
24+
TO-263
90000
一級代理商進口原裝現(xiàn)貨、假一罰十價格合理
 詢價
ON
24+
35200
一級代理/放心采購
 詢價
ON
08+
3350
普通
 詢價
ON/安森美
22+
SOT263
20000
保證原裝正品,假一陪十
 詢價
更多MTB36N06V供應(yīng)商 更新時間2025-3-31 15:01:00

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