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MT5C1005

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

MT5C1005

256K x 4 SRAM SRAM MEMORY ARRAY

AUSTIN

Austin Semiconductor

MT5C1005C-20L/883C

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

MT5C1005C-20L/IT

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

MT5C1005C-20L/XT

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

MT5C1005C-25L/883C

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

MT5C1005C-25L/IT

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

MT5C1005C-25L/XT

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

MT5C1005C-35L/883C

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

MT5C1005C-35L/IT

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

MT5C1005C-35L/XT

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

MT5C1005C-40L/883C

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

MT5C1005C-40L/IT

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

MT5C1005C-40L/XT

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

MT5C1005C-55L/883C

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

MT5C1005C-55L/IT

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

MT5C1005C-55L/XT

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

MT5C1005C-70L/883C

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

MT5C1005C-70L/IT

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

MT5C1005C-70L/XT

256K x 4 SRAM SRAM MEMORY ARRAY

GENERALDESCRIPTION TheAustinSemiconductorSRAMfamilyemployshigh-speed,lowpowerCMOSdesignsfabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:20,25,35,and45 ?BatteryBackup:2Vdataretention ?Lowpowerstandby ?High-performance,

AUSTIN

Austin Semiconductor

詳細(xì)參數(shù)

  • 型號:

    MT5C1005

  • 制造商:

    AUSTIN

  • 制造商全稱:

    Austin Semiconductor

  • 功能描述:

    256K x 4 SRAM SRAM MEMORY ARRAY

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MT
2020+
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4758
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MT
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893993
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MT
23+
DIP
4758
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24+
DIP28
1
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MCT
1994
330
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ASI
18+
CDIP
300
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ASI
23+
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66800
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2020+
CDIP
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
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ASI
2021+
60000
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MT
8
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更多MT5C1005供應(yīng)商 更新時(shí)間2025-1-7 8:21:00