MT58L1MY18D中文資料鎂光數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

The Micron?SyncBurst?SRAM family employs high speed, low-power CMOS designs that are fabricated using an advanced CMOS process.

Micron’s 16Mb SyncBurst SRAMs integrate a 1 Meg x 18, 512K x 32, or 512K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers controlled by a positive-edge-triggered single-clock input (CLK).

FEATURES

? Fast clock and OE# access times

? Single +3.3V ±0.165Vor 2.5V ±0.125V power supply (VDD)

? Separate +3.3V or 2.5V isolated output buffer supply (VDDQ)

? SNOOZE MODE for reduced-power standby

? Common data inputs and data outputs

? Individual BYTE WRITE control and GLOBAL WRITE

? Three chip enables for simple depth expansion and address pipelining

? Clock-controlled and registered addresses, data I/Os and control signals

? Internally self-timed WRITE cycle

? Burst control (interleaved or linear burst)

? Automatic power-down

? 100-pin TQFP package

? 165-pin FBGA package

? Low capacitive bus loading

? x18, x32, and x36 versions available