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MT28F640J3RG-12ET中文資料鎂光數(shù)據(jù)手冊PDF規(guī)格書

MT28F640J3RG-12ET
廠商型號

MT28F640J3RG-12ET

功能描述

Q-FLASHTM MEMORY

文件大小

548.36 Kbytes

頁面數(shù)量

52

生產(chǎn)廠商 Micron Technology
企業(yè)簡稱

Micron鎂光

中文名稱

美國鎂光科技有限公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-12-23 22:30:00

MT28F640J3RG-12ET規(guī)格書詳情

GENERAL DESCRIPTION

The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F640J3 contains 67,108,864 bits organized as 8,388,608 bytes (8 bits) or 4,194,304 words (16 bits). This 64Mb device is organized as sixty-four 128KB erase blocks.

Similarly, the MT28F320J3 contains 33,554,432 bits organized as 4,194,304 bytes (8 bits) or 2,097,152 words (16 bits). This 32Mb device is organized as thirty-two 128KB erase blocks.

These three devices feature in-system block locking. They also have common flash interface (CFI) that permits software algorithms to be used for entire families of devices. The software is device-independent, JEDEC ID-independent with forward and backward compatibility.

FEATURES

? x8/x16 organization

? One hundred twenty-eight 128KB erase blocks (128Mb)

Sixty-four 128KB erase blocks (64Mb)

Thirty-two 128KB erase blocks (32Mb)

? VCC, VCCQ, and VPEN voltages:

2.7V to 3.6V VCC operation

2.7V to 3.6V or 4.5V to 5.5V* VCCQ operation

2.7V to 3.6V, or 5V VPEN application programming

? Interface Asynchronous Page Mode Reads:

150ns/25ns read access time (128Mb)

120ns/25ns read access time (64Mb)

110ns/25ns read access time (32Mb)

? Enhanced data protection feature with VPEN = VSS Flexible sector locking Sector erase/program lockout during power transition

? Security OTP block feature Permanent block locking (Contact factory for availability)

? Industry-standard pinout

? Inputs and outputs are fully TTL-compatible

? Common Flash Interface (CFI) and Scalable Command Set

? Automatic write and erase algorithm

? 4.7μs-per-byte effective programming time using write buffer

? 128-bit protection register

64-bit unique device identifier

64-bit user-programmable OTP cells

? 100,000 ERASE cycles per block

? Automatic suspend options:

Block Erase Suspend-to-Read

Block Erase Suspend-to-Program

Program Suspend-to-Read

產(chǎn)品屬性

  • 型號:

    MT28F640J3RG-12ET

  • 制造商:

    MICRON

  • 制造商全稱:

    Micron Technology

  • 功能描述:

    Q-FLASHTM MEMORY

供應商 型號 品牌 批號 封裝 庫存 備注 價格
MT
2020+
TSOP56
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
MICRON/美光
24+
TSOP
96880
只做原裝,歡迎來電資詢
詢價
MICRON
0350+
TSOP56
1470
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
MT
23+
TSOP56
20000
原廠原裝正品現(xiàn)貨
詢價
MICRON
1844+
TSOP
9852
只做原裝正品假一賠十為客戶做到零風險!!
詢價
MT
2022
TSSOP
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
MICRON
23+
TSOP
111
原裝正品現(xiàn)貨
詢價
MICRON
22+23+
TSOP
13615
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
MT
TSSOP
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
詢價
MICRON
2023+
TSOP
53500
正品,原裝現(xiàn)貨
詢價