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MT28F008B3

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT28F008B3SG-9B

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT28F008B3SG-9BET

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT28F008B3SG-9T

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT28F008B3SG-9TET

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT28F008B3VG-9B

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT28F008B3VG-9BET

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT28F008B3VG-9T

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT28F008B3VG-9TET

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT28F008B3WG-9B

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

詳細(xì)參數(shù)

  • 型號：

    MT28F008B3

  • 制造商：

    MICRON

  • 制造商全稱：

    Micron Technology

  • 功能描述：

    FLASH MEMORY

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
24+
5000
公司存貨
 詢價(jià)
N/A
24+
TSSOP
5632
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
 詢價(jià)
SAMSUNG
23+
TSOP
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
SAMSUNG
34
TSOP
416
原裝正品
 詢價(jià)
N/A
22+
TSSOP
25000
只有原裝原裝,支持BOM配單
 詢價(jià)
MICRON
2020+
TSOP
937
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
MICRON
23+
DIP-8P
5000
原裝正品,假一罰十
 詢價(jià)
MICRO
2016+
SOP
3000
主營TI,絕對原裝,假一賠十,可開17%增值稅發(fā)票!
 詢價(jià)
MICRON
24+
TSOP
4650
詢價(jià)
MT
TSOP40
26300
全新原裝進(jìn)口自己庫存優(yōu)勢
 詢價(jià)
更多MT28F008B3供應(yīng)商 更新時(shí)間2025-3-24 16:00:00

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