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MRF904

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: DesignedprimarilyforuseINHighGain,lownoisegeneralpurposeamplifiers. Features ?SiliconNPN,highFrequency,To-72packaged,Transistor ?HighPowerGain-GU(max)=11dB(typ)@f=450MHz 7dB(typ)@f=1GHz ?Low

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MRF904

NPN SILICON RF TRANSISTOR

DESCRIPTION: TheASIMRF904isDesignedforGeneralPurposeAmplifierApplications. FEATURES: ?NF=1.5dB(Typ)450MHz ?Gmax=16dB(Typ)450MHz ?fT=4.0GHz(Typ)@IC=15mA

ASI

Advanced Semiconductor

MRF904

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: DesignedprimarilyforuseinHighGain,lownoisegeneral-purposeamplifiers. Features ?SiliconNPN,highFrequency,To-72packaged,Transistor ?HighPowerGain-GU(max):11dB(typ)@f=450MHz 7dB(typ)@f=1GHz ?Lo

ADPOW

Advanced Power Technology

MRF904

包裝:卷帶(TR) 封裝/外殼:TO-206AF,TO-72-4 金屬罐 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極(BJT)- 射頻 描述:RF TRANS NPN 15V 4GHZ TO72

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MRF9045

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistor N–ChannelEnhancement–ModeLateralMOSFET Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthisdevicemakeitidealforlarge–signal,common–sour

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF9045LR1

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,common-sourceamplifierapplicati

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MRF9045LSR1

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,common-sourceamplifierapplicati

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MRF9045M

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistor N–ChannelEnhancement–ModeLateralMOSFET Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthisdevicemakeitidealforlarge–signal,common–sour

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF9045MBR1

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistor N–ChannelEnhancement–ModeLateralMOSFET Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthisdevicemakeitidealforlarge–signal,common–sour

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF9045MR1

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistor N–ChannelEnhancement–ModeLateralMOSFET Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthisdevicemakeitidealforlarge–signal,common–sour

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF9045MR1

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistor N–ChannelEnhancement–ModeLateralMOSFET Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthisdevicemakeitidealforlarge–signal,common–sour

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF9045NR1

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

RFPowerFieldEffectTransistor N-ChannelEnhancement-ModeLateralMOSFET Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthisdevicemakeitidealforlarge-signal,common-sourceamplifierapplicationsin

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MRF9045LR1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MRF9045LR1_08

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MRF9045LSR1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MRF9045LR1

包裝:散裝 封裝/外殼:NI-360 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - FET,MOSFET - 射頻 描述:FET RF 65V 945MHZ NI-360

NXP USA Inc.

NXP USA Inc.

NXP USA Inc.

MRF9045LR1

包裝:卷帶(TR) 封裝/外殼:NI-360 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - FET,MOSFET - 射頻 描述:FET RF 65V 945MHZ NI-360

NXP USA Inc.

NXP USA Inc.

NXP USA Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    MRF904

  • 制造商:

    Microsemi Corporation

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極(BJT)- 射頻

  • 包裝:

    卷帶(TR)

  • 晶體管類型:

    NPN

  • 電壓 - 集射極擊穿(最大值):

    15V

  • 頻率 - 躍遷:

    4GHz

  • 噪聲系數(shù)(dB,不同 f 時(shí)的典型值):

    1.5dB @ 450MHz

  • 增益:

    6.5dB ~ 10.5dB

  • 功率 - 最大值:

    200mW

  • 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):

    30 @ 5mA,5V

  • 電流 - 集電極 (Ic)(最大值):

    30mA

  • 工作溫度:

    200°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-206AF,TO-72-4 金屬罐

  • 供應(yīng)商器件封裝:

    TO-72

  • 描述:

    RF TRANS NPN 15V 4GHZ TO72

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
MOTOROLA
23+
TO-5g
5100
大量原裝高頻管、模塊現(xiàn)貨供應(yīng)!
詢價(jià)
(空白)
24+
5000
公司存貨
詢價(jià)
MOT
23+
CAN4
5000
原裝正品,假一罰十
詢價(jià)
MOTOROLA
23+
TO-5g
650
專營高頻管模塊,全新原裝!
詢價(jià)
Microsemi
23+
RF-FET
7750
全新原裝優(yōu)勢(shì)
詢價(jià)
MOTOROLA
16+
原封裝
1303
原裝現(xiàn)貨假一罰十
詢價(jià)
MOTOROLA
24+
CAN-4
5000
只做原裝公司現(xiàn)貨
詢價(jià)
MOT
23+
CAN3
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
詢價(jià)
MOTOROLA/摩托羅拉
專業(yè)鐵帽
CAN4
5000
原裝鐵帽專營,代理渠道量大可訂貨
詢價(jià)
MOTOROLA/摩托羅拉
專業(yè)鐵帽
CAN3
67500
鐵帽原裝主營-可開原型號(hào)增稅票
詢價(jià)
更多MRF904供應(yīng)商 更新時(shí)間2024-12-26 14:39:00