N--Channel Enhancement--Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 1805 to

1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

used in Class AB and Class C for PCN--PCS/cellular radio and WLL

applications.

? Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =

1400 mA, Pout = 50 Watts Avg., f = 1807.5 MHz, IQ Magnitude Clipping,

Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01

Probability on CCDF.

Power Gain ? 17.5 dB

Drain Efficiency ? 31

Device Output Signal PAR ? 6.2 dB @ 0.01 Probability on CCDF

ACPR @ 5 MHz Offset ? --37 dBc in 3.84 MHz Channel Bandwidth

? Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 170 Watts CW

Output Power

? Pout @ 1 dB Compression Point ? 170 Watts CW

Features

? 100 PAR Tested for Guaranteed Output Power Capability

? Characterized with Series Equivalent Large--Signal Impedance Parameters

? Internally Matched for Ease of Use

? Integrated ESD Protection

? Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

? Designed for Digital Predistortion Error Correction Systems

? RoHS Compliant

? In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

For R5 Tape and Reel option, see p. 17.

MRF7S18170H屬于分立半導體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻。恩智浦半導體公司制造生產(chǎn)的MRF7S18170H晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。