MRF281

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPOWERFIELDEFFECTTRANSISTORS N–ChannelEnhancement–ModeLateralMOSFETs DesignedfordigitalandanalogcellularPCNandPCSbasestationapplicationswithfrequenciesfrom1000to2500MHz.CharacterizedforoperationClassAandClassABat26volts

MRF281

RF Power Field Effect Transistors

MRF281SR1

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPOWERFIELDEFFECTTRANSISTORS N–ChannelEnhancement–ModeLateralMOSFETs DesignedfordigitalandanalogcellularPCNandPCSbasestationapplicationswithfrequenciesfrom1000to2500MHz.CharacterizedforoperationClassAandClassABat26volts

MRF281ZR1

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPOWERFIELDEFFECTTRANSISTORS N–ChannelEnhancement–ModeLateralMOSFETs DesignedfordigitalandanalogcellularPCNandPCSbasestationapplicationswithfrequenciesfrom1000to2500MHz.CharacterizedforoperationClassAandClassABat26volts

MRF281SR1

RF Power Field Effect Transistors

MRF281SR1_06

RF Power Field Effect Transistors

MRF281ZR1

RF Power Field Effect Transistors

MRF281SR1

Package：NI-200S；包裝：卷帶（TR） 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 1.93GHZ NI-200S

NXP USA Inc.

MRF281ZR1

Package：NI-200Z；包裝：卷帶（TR） 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 1.93GHZ NI-200Z

NXP USA Inc.

MS281

PowerFilmResistors

[CADDOCKELECTRONICS,INC.] PowerFilmResistorFamilywithWideResistanceRangeand+275°CMaximumTemperature Withpowerratingsto22Wattsandvoltageratingsashighas6,000voltsinanaxial-leadresistorwithvaluesto30Megohms,theTypeMSPowerFilmResistorsdelivertheperformanc