| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960-1215 MHz, 18V DescriptionandApplications DesignedforClassAandABcommonemitteramplifierapplicationsinthelow–powerstagesofIFF,DME,TACAN,radartransmitters,andCWsystems. Features ?Guaranteedperformance@1090MHz,18Vdc—ClassA ?Outputpower:0.2W ?Minimumgain:10dB ?100tested | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM | ||
MICROWAVE POWER TRANSISTORS NPN SILICON DesignedforClassAandABcommonemitteramplifierapplicationsinthelow–powerstagesofIFF,DME,TACAN,radartransmitters,andCWsystems. ?GuaranteedPerformance@1090MHz,18Vdc—ClassA OutputPower=0.2Watt MinimumGain=10dB ?100TestedforLoadMismatchatAllPha | MACOM Tyco Electronics | MACOM | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF1000MBisDesignedforClassA,DME/TACANApplicationsupto1090MHz. FEATURES: ?ClassAOperation ?PG=10dBat0.2W/1090MHz ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: SiliconNPNtransistor,designedforVHFandUHFequipment.Applicationsincludeamplifier;pre-driver,driver,andoutputstages.Alsosuitableforoscillatorandfrequency-multiplierfunctions. Features ?SiliconNPN,To-39packagedVHF/UHFTransistor ?Ftau=3.0Ghz(typ)@30 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: SiliconNPNtransistor,designedforVHFandUHFequipment.Applicationsincludeamplifier;pre-driver,driver,andoutputstages.Alsosuitableforoscillatorandfrequency-multiplierfunctions. Features ?SiliconNPN,To-39packagedVHF/UHFTransistor ?Ftau=3.0Ghz(typ)@30 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
ELECTRICAL SPECIFICATIONS (Tease - 25?C) ELECTRICALSPECIFICATIONS(Tease-25°C) | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: TheASIMRF1001AisaHighFrequencyTransistorDesignedforAmplifierandOscillatorApplications. | ASI Advanced Semiconductor | ASI | ||
MICROWAVE POWER TRANSISTORS TheRFLine MicrowavepulsePowerTransistors ...designedforClassBandCcommonbaseamplifierapplicationsinshortandlongpulseTACAN,IFF,DME,andradartransmitters. ?GuaranteedPerformance@1090MHz,35Vdc OutputPower=2.0WattsPeak MinimumGain=10dB ?100Tested | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
MICROWAVE POWER TRANSISTORS TheRFLine MicrowavepulsePowerTransistors ...designedforClassBandCcommonbaseamplifierapplicationsinshortandlongpulseTACAN,IFF,DME,andradartransmitters. ?GuaranteedPerformance@1090MHz,35Vdc OutputPower=2.0WattsPeak MinimumGain=10dB ?100Tested | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
MICROWAVE POWER TRANSISTORS TheRFLine MicrowavepulsePowerTransistors ...designedforClassBandCcommonbaseamplifierapplicationsinshortandlongpulseTACAN,IFF,DME,andradartransmitters. ?GuaranteedPerformance@1090MHz,35Vdc OutputPower=2.0WattsPeak MinimumGain=10dB ?100Tested | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
甚高頻 （VHF）_TR
- 封裝形式：
直插封裝
- 極限工作電壓：
36V
- 最大電流允許值：
0.4A
- 最大工作頻率：
220MHZ
- 引腳數(shù)：
3
- 可代換的型號：
BFR36,BLW11,3DA21A,
- 最大耗散功率：
1W
- 放大倍數(shù)：
- 圖片代號：
C-40
- vtest：
36
- htest：
220000000
- atest：
0.4
- wtest：
1
產(chǎn)品屬性
- 產(chǎn)品編號：
MRF
- 制造商：
L3 Narda-MITEQ
- 類別：
RF/IF，射頻/中頻和 RFID > RF 其它 IC 和模塊
- 包裝：
盒
- 描述：
L3 PRODUCT
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
BEL |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
MOT |
2020+ |
N/A |
2232 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
MOTOROLA |
2016+ |
SOT143 |
3000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
FREESCALE |
17+ |
SMD |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
MOTOROLA |
23+ |
TO-57s |
450 |
專營高頻管模塊,全新原裝! |
詢價 | ||
24+ |
CAN |
500 |
詢價 | ||||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | ||||
M/A-COM |
20+ |
TO-62 |
168 |
原裝正品現(xiàn)貨 |
詢價 | ||
MINI |
24+ |
SMD |
3600 |
MINI專營品牌全新原裝正品假一賠十 |
詢價 | ||
MOTOROLA |
00+ |
陶瓷高頻管 |
3 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 |
