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MR828

Fast Silicon Rectifiers

FEATURES ?PlasticpackagehasUnderwritesLaboratoryFlammabilityClassification94V-0 ?Fastswitchingspeed ?Diffusedjunction ?Highcurrentcapability ?Hightemperaturesolderingguaranteed:250℃/10seconds,0.375(9.5mm)leadlength,5lbs.(2.3kg)tension.

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯電子深圳市泰迪斯電子科技有限公司

MR828

Axial lead diode

ForwardCurrent:5A ReverseVoltage:50to1000V Features ?Max,soldertemperature:260°C ?PlasticmaterialhasULclassification94V-0

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MR828

Fast silicon rectifier diodes

ForwardCurrent:5A ReverseVoltage:50to1000V Features ?Max.soldertemperature:260°C ?PlasticmaterialhasULclassification94V-0

SemikronSemikron International

賽米控丹佛斯

MR828

CURRENT 5.0 Amperes VOLTAGE 50 to 800 Volts

Features ?PlasticpackagehasUnderwritesLaboratoryFlammabilityClassification94V-0 ?Fastswitchingspeed ?Diffusedjunction ?Highcurrentcapability ?Hightemperaturesolderingguaranteed:250℃/10seconds,0.375(9.5mm)leadlength,5lbs.(2.3kg)tension.

DAESAN

Daesan Electronics Corp.

MR828

Fast Silicon Rectifiers

Features HighforwardsurgecurrentComplianttoRoHS,REACH,ConflictMinerals1) TypicalApplication Rectificationofmediumfrequencies,SnubberorBootstrapdiodesCommercialgrade1) MechanicalData1) Tapedinammopack500 Weightapprox.1.7g

Diotec

Diotec Semiconductor

MR828

Fast Silicon-Rectifiers

Diotec

Diotec Semiconductor

MR828

Fast Recovery Rectifier Diodes

Diotec

Diotec Semiconductor

MR828

Fast silicon rectifier diodes

SemikronSemikron International

賽米控丹佛斯

MUR828

GLASSPASSIVATEDSUPERFASTRECTIFIER

FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ?Fastswitchingforhighefficiency ?Lowforwardvoltagedrop ?Singlerectifierconstruction ?Highsurgecapability ?Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolaritypro

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟南晶恒電子有限責(zé)任公司

MUR828

GLASSPASSIVATEDSUPERFASTRECTIFIER

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟南晶恒電子有限責(zé)任公司

MZ828

3WATTGLASSZENERDIODES

FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance.

MicrosemiMicrosemi Corporation

美高森美美高森美公司

NTE828

IntegratedCircuitAudioPowerAmp,1.5W

Description: TheNTE828isanaudioamplifierina14–LeadDIPtypepackagedesignedforuseinmediumpowerconsumerapplications.Thegainisinternallysetto20tokeepexternalpartcountlow,buttheadditionofanexternalresistorandcapacitorbetweenPin2andPin6willincreasethegain

NTE

NTE Electronics

OPA828

Low-Offset,Low-Drift,Low-Noise,50-MHz,36-VJFET-InputOperationalAmplifier

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

OPA828

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-VJFET-Input,OperationalAmplifiers

1Features ?Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz ?Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS ?Lowinputbiascurrent:1pA ?Inputoffsetvoltage:50μV ?Inputoffsetdrift:0.45μV/°C ?MUX-friendlyinputs ?Gainbandwidth:45MHz ?Slewrate:150V/μs ?14-bitse

TITexas Instruments

德州儀器美國德州儀器公司

OPA828

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-V,JFET-InputOperationalAmplifiers

1Features ?Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz ?Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS ?Lowinputbiascurrent: –0.1pA(DGN) –1pA(D) ?Inputoffsetvoltage: –25μV(DGN) –50μV(D) ?Inputoffsetdrift: –0.2μV/°C(DGN) –0.45μV/°C(D) ?MUX-friend

TITexas Instruments

德州儀器美國德州儀器公司

OPA828ID

Low-Offset,Low-Drift,Low-Noise,50-MHz,36-VJFET-InputOperationalAmplifier

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

OPA828ID

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-VJFET-Input,OperationalAmplifiers

1Features ?Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz ?Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS ?Lowinputbiascurrent:1pA ?Inputoffsetvoltage:50μV ?Inputoffsetdrift:0.45μV/°C ?MUX-friendlyinputs ?Gainbandwidth:45MHz ?Slewrate:150V/μs ?14-bitse

TITexas Instruments

德州儀器美國德州儀器公司

OPA828ID

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-V,JFET-InputOperationalAmplifiers

1Features ?Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz ?Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS ?Lowinputbiascurrent: –0.1pA(DGN) –1pA(D) ?Inputoffsetvoltage: –25μV(DGN) –50μV(D) ?Inputoffsetdrift: –0.2μV/°C(DGN) –0.45μV/°C(D) ?MUX-friend

TITexas Instruments

德州儀器美國德州儀器公司

OPA828IDGNR

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-V,JFET-InputOperationalAmplifiers

1Features ?Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz ?Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS ?Lowinputbiascurrent: –0.1pA(DGN) –1pA(D) ?Inputoffsetvoltage: –25μV(DGN) –50μV(D) ?Inputoffsetdrift: –0.2μV/°C(DGN) –0.45μV/°C(D) ?MUX-friend

TITexas Instruments

德州儀器美國德州儀器公司

OPA828IDGNT

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-V,JFET-InputOperationalAmplifiers

1Features ?Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz ?Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS ?Lowinputbiascurrent: –0.1pA(DGN) –1pA(D) ?Inputoffsetvoltage: –25μV(DGN) –50μV(D) ?Inputoffsetdrift: –0.2μV/°C(DGN) –0.45μV/°C(D) ?MUX-friend

TITexas Instruments

德州儀器美國德州儀器公司

詳細參數(shù)

  • 型號：

    MR828

  • 制造商：

    SEMIKRON

  • 制造商全稱：

    Semikron International

  • 功能描述：

    Fast silicon rectifier diodes

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAYMAS
22+23+
DO-15
53337
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
VISHAY/威世
DO-15
90000
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
INTERSI
2020+
CLCC
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
INTERSIL
22+
CLCC
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價
INTERSI
23+
CLCC
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
INTERSIL
QQ咨詢
CLCC
827
全新原裝 研究所指定供貨商
 詢價
NEC
1736+
RELAY
8529
專營繼電器只做原裝正品假一賠十!
 詢價
INT
620
412
原裝正品
 詢價
INTEL
2021+
60000
原裝現(xiàn)貨，歡迎詢價
 詢價
INTEL
2021+
LCC
1600
自家?guī)齑?百分之百原裝
 詢價
更多MR828供應(yīng)商 更新時間2024-11-19 16:01:00

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