首頁 >MP6003-LF-Z>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
MonolithicFlyback/ForwardDC-DCConverterEvaluationBoard | MPSMonolithic Power Systems Inc. 美國芯源美國芯源系統(tǒng)有限公司 | MPS | ||
ExpandableFanlessEmbeddedComputer | AdlinkAdlink Technology Inc. 凌華科技凌華科技股份有限公司 | Adlink | ||
N-channelMOSFET600V,2A,4.4Ω Description TheN6003NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) ?Lowinputcapacitance Ciss=400pFTYP.(VDS=10V,VGS=0V) ?Highcurrent ID(DC)=±2.0 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE6003usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
N-Channel60-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Available ?TrenchFET?PowerMOSFET ?100RgTested ?100UISTested APPLICATIONS ?BatterySwitch ?DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
LCEN-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE6003Musesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. GeneralFeature ●VDS=60V,ID=3.0A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE6003Xusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE6003XMusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE6003XYusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
NCEN-ChannelEnhancementModePowerMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
N-Channel60-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Available ?TrenchFET?PowerMOSFET ?100RgTested ?100UISTested APPLICATIONS ?BatterySwitch ?DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
2Ports100GbEQSFP28NetworkMezzanineCard Features ?SinglehostNICsolutionbyusingIntelE810-CAM2 ?Overlaynetworkssupport:VxLAN&NVGRE ?CPUoffload:TSO,LRO,GRO ?Jumboframesupport(9.6KB) ?CompatiblewithFWA-5070,FWA-6070Platform | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
1or2Ports100GbEQSFP28NetworkMezzanineCard Features ?1xIntelE810-CAM1orE810-CAM2 ?1or2portsQSFP28connector ?1xPCIex8,Gen4 ?CE/FCC,RoHScompliant | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
NTE5906,NTE5907,NTE5980thruNTE6005SiliconPowerRectifierDiode,40Amp SiliconPowerRectifierDiode,40Amp Features: HighSurgeCurrentCapability HighVoltageAvailable DesignedforaWideRangeofApplications AvailableinAnode–to–CaseorCathode–to–CaseStyle | NTE NTE Electronics | NTE | ||
TYPEIICALLERIDDECODER | IDT Integrated Device Technology, Inc. | IDT | ||
POWERMOSFETINHERMETICISOLATEDJEDECTO257AAPACKAGE | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
POWERMOSFETINHERMETICISOLATEDJEDECTO-257AAPACKAGE [Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.TheyareideallysuitedforMilitaryrequirementswheresmallsize,highperformanceandhighreliabilityarerequired,andinapplicationssuchasswitchingpowersup | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
LowVCEsat(BISS)transistors | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
MPS |
22+ |
SOP-8 |
58000 |
原裝現(xiàn)貨,OEM渠道。 |
詢價(jià) | ||
TOSHIBA |
23+ |
高頻管 |
200 |
專營高頻管模塊,全新原裝! |
詢價(jià) | ||
TOSHIBA |
24+ |
12 |
詢價(jià) | ||||
MPS |
1948+ |
QFN-14(3x3) |
18562 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
SONY/索尼 |
24+ |
240 |
現(xiàn)貨供應(yīng) |
詢價(jià) | |||
TOSHIBA |
專業(yè)模塊 |
MODULE |
8513 |
模塊原裝主營-可開原型號(hào)增稅票 |
詢價(jià) | ||
TOSHIBA |
2018+ |
module |
6000 |
全新原裝正品現(xiàn)貨,假一賠佰 |
詢價(jià) | ||
TOSHIBA |
24+ |
2173 |
公司大量全新正品 隨時(shí)可以發(fā)貨 |
詢價(jià) | |||
TOSHIBA |
24+ |
模塊 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價(jià) | ||
SONY/索尼 |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價(jià)格優(yōu)勢 |
詢價(jià) |
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