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MMSF3P02HDR2

Power MOSFET 3 Amps, 20 Volts P??hannel SO??

TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.Theyarecapableofwithstandinghighenergyintheavalancheandcommutationmodesandthedrain?to?sourcediodehasaverylowreverserecoverytime.MiniMOSdevicesaredesignedforuseinlowvolt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMSF3P02HDR2G

Power MOSFET 3 Amps, 20 Volts P??hannel SO??

TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.Theyarecapableofwithstandinghighenergyintheavalancheandcommutationmodesandthedrain?to?sourcediodehasaverylowreverserecoverytime.MiniMOSdevicesaredesignedforuseinlowvolt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMSF3P02HDR2G

P-Channel 20-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

MMSF3P02HD

PowerMOSFET3Amps,20VoltsP??hannelSO??

TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.Theyarecapableofwithstandinghighenergyintheavalancheandcommutationmodesandthedrain?to?sourcediodehasaverylowreverserecoverytime.MiniMOSdevicesaredesignedforuseinlowvolt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMSF3P02HD

SINGLETMOSPOWERMOSFET3.0AMPERES20VOLTS

MediumPowerSurfaceMountProducts TMOSSingleP-ChannelFieldEffectTransistors MiniMOS?devicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocess. ?UltraLowRDS(on)ProvidesHigherEfficiencyandExtendsBatteryLife ?LogicLevelGat

Motorola

Motorola, Inc

RD3P02BAT

Pch-100V-20APowerMOSFET

Features 1)Lowon-resistance 2)Highpowersmallmoldpackage 3)Pb-freeplating;RoHScompliant 4)100RgandUIStested 5)Halogenfree Application Switching

ROHMRohm

羅姆羅姆半導(dǎo)體集團

SDT3P02-C

Dual-PEnhancementModeMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

WFY3P02

P-Channel20-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitch ?PASwitch ?DC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

WFY3P02

TrenchPowerMOSFET??0V,SingleP??hannel,SOT??3

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司

詳細(xì)參數(shù)

  • 型號:

    MMSF3P02HDR

  • 功能描述:

    MOSFET PFET SO8S 20V 5.6A 75mOhm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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2022
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更多MMSF3P02HDR供應(yīng)商 更新時間2024-11-20 15:49:00