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MMD80R900QZ

800V 0.90? N-channel MOSFET

?Description MMD80R900QZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIto

MGCHIP

MagnaChip Semiconductor.

MMD80R900QZRH

Marking:80R900QZ;Package:TO-252-2L;800V 0.90? N-channel MOSFET

?Description MMD80R900QZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIto

MGCHIP

MagnaChip Semiconductor.

MMF80R900P

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF80R900P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMF80R900PB

800V0.9ohmN-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF80R900PBTH

800V0.9ohmN-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF80R900PC

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF80R900PCTH

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF80R900PCTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMF80R900PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMF80R900PTH

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP80R900PC

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP80R900PCTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMP80R900PCTH

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

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更多MMD80R900QZ供應(yīng)商 更新時(shí)間2025-1-14 17:22:00

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