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MMBT5551T

SiliconNPNtransistorinaSOT-89PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

MMBT5551-TP

PNPPlasticEncapsulateTransistor

Features ????????Halogenfreeavailableuponrequestbyaddingsuffix-HF ?CollectorCurrent:ICM=0.6A ?Collector-BaseVoltage:V(BR)CBO=180V ?OperatingAndStorageTemperatures–55OCto150OC ?Capableof0.3WattsofPowerDissipation ?Marking:G1 ?LeadFreeFinish/RoHSCompliant(P

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMBT5551W

Plastic-EncapsulateTransistor

FEATURE ?IdealforMediumPowerAmplificationandSwitching ?AlsoAvailableinLeadFreeVersion ?ComplementarytoMMBT5401W

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

MMBT5551W

SiliconPNPtransistorinaSOT-323PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-323PlasticPackage. Features Highvoltage,complementarypairwithMMBT5401W. Applications Generalpurposehighvoltageamplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

MMBT5551W

MMBT5551WTRANSISTOR(NPN)

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

MMBT5551W

Plastic-EncapsulateTransistors

FEATURE IdealforMediumPowerAmplificationandSwitching AlsoAvailableinLeadFreeVersion ComplementarytoMMBT5401W

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

MMDT5551

NPNNPNPlastic-EncapsulateTransistors

Features EpitaxialPlanarDieConstruction ComplementaryPNPTypeAvailable(TPMMDT5401) IdealforMediumPowerAmplificationandSwitching

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

MMDT5551

DUALNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ?EpitaxialPlanarDieConstruction ?ComplementaryPNPTypeAvailable(MMDT5401) ?IdealforMediumPowerAmplificationandSwitching ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant(Note3) ?GreenDevice(Note4and5)

DIODES

Diodes Incorporated

MMDT5551

DUALNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

MMDT5551

DUALNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ?EpitaxialPlanarDieConstruction ?ComplementaryPNPTypeAvailable(MMDT5401) ?IdealforMediumPowerAmplificationandSwitching ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant(Note3) ?GreenDevice(Note4and5)

DIODES

Diodes Incorporated

MMDT5551

Plastic-EncapsulateTransistors

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMDT5551

Plastic-EncapsulateTransistors

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?Capableof200mWattsofPowerDissipation ?Idealf

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMDT5551

DualNPNSmallSignalSurfaceMountTransistor

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

MMDT5551

Plastic-EncapsulateTransistors

FEATURES EpitaxialPlanarDieConstruction ComplementaryPNPTypeAvailable(MMDT5401) IdealforMediumPowerAmplificationandSwitching

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰電子有限公司

MMDT5551

HIGHVOLTAGESWITCHINGTRANSISTOR

DESCRIPTION TheUTCMMDT5551isahighvoltagefast-switchingdualNPNtransistor.Itischaracterizedwithhighbreakdownvoltage,highcurrentgainandhighswitchingspeed. FEATURES *HighCollector-EmitterVoltage:VCEO=160V *Highcurrentgain

UTCUnisonic Technologies

友順友順科技股份有限公司

MMDT5551

Plastic-EncapsulateTransistors

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMDT5551

DUALTRANSISTOR

DUALTRANSISTOR(NPN+NPN) FEATURES ●EpitaxialPlanarDieConstruction ●ComplementaryPNPTypeAvailable(MMDT5401) ●IdealforMediumPowerAmplificationandSwitching

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

MMDT5551

Multi-ChipTRANSISTOR(NPN)

FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:180V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

MMDT5551

NPNNPNPlastic-EncapsulateTransistors

FEATURES ?EpoxymeetsUL-94V-0flammabilityrating ?ComplementarytoMMDT5401 ?EpitaxialPlanarDieConstruction ?IdealforMediumPowerAmplificationandSwitching

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

MMDT5551

EpitaxialPlanarDieConstruction

Features EpitaxialPlanarDieConstruction ComplementaryPNPTypeAvailable(MMDT5401) IdealforMediumPowerAmplificationandSwitching Ultra-SmallSurfaceMountPackage LeadFree/RoHSCompliant(Note3)

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
N/A
76000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢(xún)價(jià)
MSKSEMI(美森科)
23+
SOT-23
2100
三極管/MOS管/晶體管 > 三極管(BJT)
 詢(xún)價(jià)
FSC
23+
NA
3486
專(zhuān)做原裝正品,假一罰百!
 詢(xún)價(jià)
FAIRCHILD
24+
原封裝
1993
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
FAIRCHIL
2315+
SOT-23
6860
優(yōu)勢(shì)代理渠道,原裝現(xiàn)貨,可全系列訂貨
 詢(xún)價(jià)
FAIRCHILD/仙童
23+
SOT23
8500
只做原裝正品假一賠十為客戶(hù)做到零風(fēng)險(xiǎn)!!
 詢(xún)價(jià)
揚(yáng)杰科技
21+
SOT-23
200
全新原裝鄙視假貨15118075546
 詢(xún)價(jià)
揚(yáng)杰
SOT-23
90000
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢(xún)價(jià)
YANGJIE
24+
SOT-23
50000
原廠(chǎng)直銷(xiāo)全新原裝正品現(xiàn)貨 歡迎選購(gòu)
 詢(xún)價(jià)
DIODES/美臺(tái)
23+
SOT23
360000
交期準(zhǔn)時(shí)服務(wù)周到
 詢(xún)價(jià)
更多MMBT5551-MS供應(yīng)商 更新時(shí)間2025-1-18 11:06:00

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