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MMBD353

Dual Hot Carrier Mixer Diodes

DualHotCarrierMixerDiodes Features Verylowcapacitance—Lessthan1.0pF@zeroV. Lowforwardvoltage—IF=10mA. PowerdissipationPd=300mW Pb/RoHSFree Applications ?DesignedprimarilyforUHFmixerapplications. ? ? ?

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

MMBD353

SURFACE MOUNT SCHOTTKY BARRIER DIODE

VeryLowCapacitance LowForwardVoltage PNJunctionGuardRingforTransientand ESDProtection ForGeneralPurposeSwitchingApplications PlasticMaterial–ULRecognitionFlammability Classification94V-0

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

MMBD353

Dual Hot Carrier Mixer Diodes

DSK

Diode Semiconductor Korea

MMBD353

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

MMBD353

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

MMBD353LT1

Dual Hot Carrier Mixer Diodes

DualHotCarrierMixerDiodes ThesedevicesaredesignedprimarilyforUHFmixerapplicationsbutaresuitablealsoforuseindetectorandultra?fastswitchingcircuits. Features ?VeryLowCapacitance?LessThan1.0pF@ZeroV ?LowForwardVoltage?0.5V(Typ)@IF=10mA ?P

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMBD353LT1

Dual Hot Carrier Mixer Diodes

DualHotCarrierMixerDiodes ThesedevicesaredesignedprimarilyforUHFmixerapplicationsbutaresuitablealsoforuseindetectorandultra–fastswitchingcircuits. ?VeryLowCapacitance—LessThan1.0pF@ZeroVolts ?LowForwardVoltage—0.5Volts(Typ)@IF=10mA

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

MMBD353LT1

Dual Hot Carrier Mixer Diodes

DualHotCarrierMixerDiodes ThesedevicesaredesignedprimarilyforUHFmixerapplicationsbutaresuitablealsoforuseindetectorandultra–fastswitchingcircuits. ?VeryLowCapacitance—LessThan1.0pF@ZeroVolts ?LowForwardVoltage—0.5Volts(Typ)@IF=10mA

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MMBD353LT1G

Dual Hot Carrier Mixer Diodes

DualHotCarrierMixerDiodes ThesedevicesaredesignedprimarilyforUHFmixerapplicationsbutaresuitablealsoforuseindetectorandultra?fastswitchingcircuits. Features ?VeryLowCapacitance?LessThan1.0pF@ZeroV ?LowForwardVoltage?0.5V(Typ)@IF=10mA ?P

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMBD353LT3G

Dual Hot Carrier Mixer Diodes

DualHotCarrierMixerDiodes ThesedevicesaredesignedprimarilyforUHFmixerapplicationsbutaresuitablealsoforuseindetectorandultra?fastswitchingcircuits. Features ?VeryLowCapacitance?LessThan1.0pF@ZeroV ?LowForwardVoltage?0.5V(Typ)@IF=10mA ?P

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    MMBD353

  • 制造商:

    PANJIT

  • 制造商全稱:

    Pan Jit International Inc.

  • 功能描述:

    SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

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ON
24+
96000
詢價(jià)
SOT-23
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
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PANJIT
23+
SOT-23
63000
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ON/安森美
23+
SOT-23
24190
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ON/安森美
21+
SOT-23
30000
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國產(chǎn)
23+
SOT-23
50000
全新原裝正品現(xiàn)貨,支持訂貨
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ON/安森美
22+
SOT-23
18000
原裝正品
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ON/安森美
23+
SOT-23
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
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ONSEMICONDU
24+
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2192
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MOTOROLA
2020+
原廠封裝
35000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
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更多MMBD353供應(yīng)商 更新時(shí)間2025-3-30 10:00:00