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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
MMAJ-20010LA	文件：127.15 Kbytes Page：3 Pages	Lightning Surge Protectors for Electronics Equipment M-RESTER	MSYSTEMM-System Co.,Ltd. 愛模愛模系統(tǒng)有限公司	MSYSTEM
MMAJ-20010LY	文件：127.15 Kbytes Page：3 Pages	LightningSurgeProtectorsforElectronicsEquipmentM-RESTER	MSYSTEMM-System Co.,Ltd. 愛模愛模系統(tǒng)有限公司	MSYSTEM
MMAJ-20010MA	文件：127.15 Kbytes Page：3 Pages	LightningSurgeProtectorsforElectronicsEquipmentM-RESTER	MSYSTEMM-System Co.,Ltd. 愛模愛模系統(tǒng)有限公司	MSYSTEM
MMAJ-20010MY	文件：127.15 Kbytes Page：3 Pages	LightningSurgeProtectorsforElectronicsEquipmentM-RESTER	MSYSTEMM-System Co.,Ltd. 愛模愛模系統(tǒng)有限公司	MSYSTEM
MTP20010	文件：660.89 Kbytes Page：3 Pages	Three-PhaseBridgeRectifier	NELLSEMINell Semiconductor Co., Ltd 尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司	NELLSEMI
MTP20010D	文件：641.08 Kbytes Page：3 Pages	Three-PhaseBridgeRectifier	NELLSEMINell Semiconductor Co., Ltd 尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司	NELLSEMI
MUR20010CT	文件：135.46 Kbytes Page：3 Pages	200AmpSupreFastRecoveryRectifier50to600Volts Features ?HighSurgeCapability ?LowLeakage ?LowForwardVoltageDrop ?HighCurrentCapability ?SupreFastswitchingforhighefficiency	MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司	MCC
MUR20010CT	文件：139.18 Kbytes Page：2 Pages	SuperFastRecoveryDiode,200A Features ?DualDiodeConstruction ?LowLeakageCurrent ?Lowforwardvoltagedrop ?Highsurgecurrentcapability ?SuperFastSwitching	NAINA Naina Semiconductor ltd.	NAINA
MUR20010CT	文件：405.49 Kbytes Page：2 Pages	HIGHPOWER-SUPERFASTRECTIFIERS Features ?HighSurgeCapability ?Typesupto600VVRRM	AMERICASEMI America Semiconductor, LLC	AMERICASEMI
MUR20010CT	文件：391.43 Kbytes Page：3 Pages	SiliconSuperFastRecoveryDiode Features ?HighSurgeCapability ?Typesfrom50Vto200VVRRM ?NotESDSensitive	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
MUR20010CT	文件：694.09 Kbytes Page：3 Pages	SiliconSuperFastRecoveryDiode	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
MUR20010CTR	文件：694.09 Kbytes Page：3 Pages	SiliconSuperFastRecoveryDiode	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
MUR20010CTR	文件：405.49 Kbytes Page：2 Pages	HIGHPOWER-SUPERFASTRECTIFIERS Features ?HighSurgeCapability ?Typesupto600VVRRM	AMERICASEMI America Semiconductor, LLC	AMERICASEMI
MUR20010CTR	文件：139.18 Kbytes Page：2 Pages	SuperFastRecoveryDiode,200A Features ?DualDiodeConstruction ?LowLeakageCurrent ?Lowforwardvoltagedrop ?Highsurgecurrentcapability ?SuperFastSwitching	NAINA Naina Semiconductor ltd.	NAINA
MUR20010CTR	文件：391.43 Kbytes Page：3 Pages	SiliconSuperFastRecoveryDiode Features ?HighSurgeCapability ?Typesfrom50Vto200VVRRM ?NotESDSensitive	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
MURF20010	文件：342.53 Kbytes Page：3 Pages	SiliconSuperFastRecoveryDiode	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
MURF20010R	文件：342.53 Kbytes Page：3 Pages	SiliconSuperFastRecoveryDiode	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
MURT20010	文件：730.21 Kbytes Page：3 Pages	SiliconSuperFastRecoveryDiode	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
MURT20010	文件：360.32 Kbytes Page：3 Pages	SiliconSuperFastRecoveryDiode	GENESIC GeneSiC Semiconductor, Inc.	GENESIC
MURT20010	文件：389.93 Kbytes Page：2 Pages	HIGHPOWER-SUPERFASTRECTIFIERS	AMERICASEMI America Semiconductor, LLC	AMERICASEMI

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